Invention Grant
- Patent Title: Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor device
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Application No.: US15938234Application Date: 2018-03-28
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Publication No.: US10453913B2Publication Date: 2019-10-22
- Inventor: Kyuho Cho , Sangyeol Kang , Suhwan Kim , Sunmin Moon , Young-Lim Park , Jong-Bom Seo , Joohyun Jeon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/02
Abstract:
A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.
Public/Granted literature
- US20180315811A1 CAPACITOR, SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE CAPACITOR AND THE SEMICONDUCTOR DEVICE Public/Granted day:2018-11-01
Information query
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