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公开(公告)号：US10090377B2
公开(公告)日：2018-10-02
申请号：US15424951
申请日：2017-02-06
发明人： Jaewan Chang , Younsoo Kim , Sunmin Moon , Jaehyoung Choi
IPC分类号： H01L49/02
摘要： A semiconductor device comprises a capacitor that includes a first electrode, a second electrode, and a dielectric layer between the first electrode and the second electrode. The dielectric layer comprises a first high-k dielectric layer between the first electrode and the second electrode, a first silicon oxide layer between the first high-k dielectric layer and the second electrode, and a first aluminum oxide layer between the first high-k dielectric layer and the second electrode.
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公开(公告)号：US11728160B2
公开(公告)日：2023-08-15
申请号：US17376403
申请日：2021-07-15
发明人： Younsoo Kim , Haeryong Kim , Seungmin Ryu , Sunmin Moon , Jeonggyu Song , Changsu Woo , Kyooho Jung , Younjoung Cho
IPC分类号： H01L21/02
CPC分类号： H01L21/02164 , H01L21/0228
摘要： A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.
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公开(公告)号：US11665884B2
公开(公告)日：2023-05-30
申请号：US17172131
申请日：2021-02-10
发明人： Chang-Su Woo , Haeryong Kim , Younsoo Kim , Sunmin Moon , Jeonggyu Song , Kyooho Jung
IPC分类号： H01L21/768 , H01L23/522 , H01L27/108
CPC分类号： H10B12/315 , H10B12/033 , H10B12/34
摘要： A semiconductor device includes conductive pillars on a semiconductor substrate, a first support pattern that contacts first portions of lateral surfaces of the conductive pillars and connects the conductive pillars to each other, the first support pattern including first support holes that expose second portions of the lateral surfaces of the conductive pillars, a capping conductive pattern that contacts the second portions of the lateral surfaces of the conductive pillars and exposes the first support pattern, the second portions of the lateral surfaces of the conductive pillars being in no contact with the first support pattern, and a dielectric layer that covers the first support pattern and the capping conductive pattern, the dielectric layer being spaced apart from the conductive pillars.
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公开(公告)号：US11621339B2
公开(公告)日：2023-04-04
申请号：US17390864
申请日：2021-07-30
发明人： Sunmin Moon , Young-Lim Park , Kyuho Cho , Hanjin Lim
IPC分类号： H01L29/51 , H01L21/762 , H01L29/15 , H01L29/06 , H01L27/108 , H01L49/02
摘要： Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.
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公开(公告)号：US11081338B2
公开(公告)日：2021-08-03
申请号：US16791189
申请日：2020-02-14
发明人： Younsoo Kim , Haeryong Kim , Seungmin Ryu , Sunmin Moon , Jeonggyu Song , Changsu Woo , Kyooho Jung , Younjoung Cho
IPC分类号： H01L21/02
摘要： A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.
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公开(公告)号：US10892345B2
公开(公告)日：2021-01-12
申请号：US15995049
申请日：2018-05-31
发明人： Sunmin Moon , Young-Lim Park , Kyuho Cho , Hanjin Lim
IPC分类号： H01L29/51 , H01L21/762 , H01L29/15 , H01L29/06 , H01L27/108 , H01L49/02
摘要： Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.
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公开(公告)号：US10658454B2
公开(公告)日：2020-05-19
申请号：US16573156
申请日：2019-09-17
发明人： Kyuho Cho , Sangyeol Kang , Suhwan Kim , Sunmin Moon , Young-Lim Park , Jong-Bom Seo , Joohyun Jeon
摘要： A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.
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公开(公告)号：US11764283B2
公开(公告)日：2023-09-19
申请号：US17720198
申请日：2022-04-13
发明人： Sunmin Moon , Young-Lim Park , Kyuho Cho , Hanjin Lim
CPC分类号： H01L29/517 , H01L21/76221 , H01L28/90 , H01L29/0649 , H01L29/152 , H01L29/518 , H10B12/033
摘要： Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.
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公开(公告)号：US11114541B2
公开(公告)日：2021-09-07
申请号：US17035675
申请日：2020-09-28
发明人： Sunmin Moon , Young-Lim Park , Kyuho Cho , Hanjin Lim
IPC分类号： H01L29/51 , H01L21/762 , H01L29/15 , H01L29/06 , H01L27/108 , H01L49/02
摘要： Disclosed is a semiconductor device including a bottom electrode, a dielectric layer, and a top electrode that are sequentially disposed on a substrate. The dielectric layer includes a hafnium oxide layer including hafnium oxide having a tetragonal crystal structure, and an oxidation seed layer including an oxidation seed material. The oxidation seed material has a lattice constant having a lattice mismatch of 6% or less with one of a horizontal lattice constant and a vertical lattice constant of the hafnium oxide having the tetragonal crystal structure.
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10.发明授权公开(公告)号：US10453913B2
公开(公告)日：2019-10-22
申请号：US15938234
申请日：2018-03-28
发明人： Kyuho Cho , Sangyeol Kang , Suhwan Kim , Sunmin Moon , Young-Lim Park , Jong-Bom Seo , Joohyun Jeon
摘要： A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.
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