-
公开(公告)号：US20240209495A1
公开(公告)日：2024-06-27
申请号：US18425048
申请日：2024-01-29
发明人： Suhwan Kim , Hyunjun Kim , Younglim Park , Dongkwan Baek , Hyungsuk Jung
IPC分类号： C23C16/02 , C23C16/44 , C23C16/448 , C23C16/52
CPC分类号： C23C16/0245 , C23C16/4412 , C23C16/4482 , C23C16/52
摘要： A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.
-
公开(公告)号：US20210202691A1
公开(公告)日：2021-07-01
申请号：US17030152
申请日：2020-09-23
发明人： Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
IPC分类号： H01L49/02 , H01L27/108
摘要： A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
-
公开(公告)号：US10453913B2
公开(公告)日：2019-10-22
申请号：US15938234
申请日：2018-03-28
发明人： Kyuho Cho , Sangyeol Kang , Suhwan Kim , Sunmin Moon , Young-Lim Park , Jong-Bom Seo , Joohyun Jeon
摘要： A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.
-
公开(公告)号：US11695034B2
公开(公告)日：2023-07-04
申请号：US17731032
申请日：2022-04-27
发明人： Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
IPC分类号： H01L21/469 , H01L21/02 , H01L49/02 , H01L27/108
CPC分类号： H01L28/91 , H01L27/10814 , H01L27/10855 , H01L28/92
摘要： A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
-
公开(公告)号：US20220033962A1
公开(公告)日：2022-02-03
申请号：US17195900
申请日：2021-03-09
发明人： Suhwan Kim , Hyunjun Kim , Younglim Park , Dongkwan Baek , Hyungsuk Jung
IPC分类号： C23C16/02 , C23C16/448 , C23C16/44 , C23C16/52
摘要： A deposition system, includes: a reaction chamber; a first gas supply unit supplying a first precursor in a liquid state stored in a first main tank to the reaction chamber in a gaseous state; a reactant supply unit supplying a reactant to the reaction chamber; and an exhaust unit discharging an exhaust material, wherein the first gas supply unit includes a first sub tank, a first liquid mass flow controller, and a first vaporizer, the first precursor is supplied to the reaction chamber by passing through the first sub tank, the first liquid mass flow controller, and the first vaporizer, a first automatic refill system operates to periodically fill the first sub tank with the liquid first precursor stored in the first main tank, and the exhaust unit comprises a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.
-
公开(公告)号：US20220254873A1
公开(公告)日：2022-08-11
申请号：US17731032
申请日：2022-04-27
发明人： Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
IPC分类号： H01L49/02 , H01L27/108
摘要： A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
-
公开(公告)号：US11348995B2
公开(公告)日：2022-05-31
申请号：US17030152
申请日：2020-09-23
发明人： Seongyul Park , Jaewan Chang , Suhwan Kim , Hyunjun Kim
IPC分类号： H01L21/02 , H01L21/469 , H01L49/02 , H01L27/108
摘要： A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.
-
公开(公告)号：US09997523B2
公开(公告)日：2018-06-12
申请号：US15631308
申请日：2017-06-23
发明人： Toshiro Nakanishi , Donghwan Kim , Suhwan Kim , Yubin Kim , Jin Soak Kim , Gabjin Nam , Sungkweon Baek , Taehyun An , Eunae Chung
CPC分类号： H01L27/1104 , H01L27/281 , H01L27/283 , H01L51/0048 , H01L51/057 , H01L51/0575
摘要： A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each of the transistors is configured as a vertical channel transistor.
-
9.发明申请公开(公告)号：US20170294441A1
公开(公告)日：2017-10-12
申请号：US15631308
申请日：2017-06-23
发明人： Toshiro Nakanishi , Donghwan Kim , Suhwan Kim , Yubin Kim , Jin Soak Kim , Gabjin Nam , Sungkweon Baek , Taehyun An , Eunae Chung
CPC分类号： H01L27/1104 , H01L27/281 , H01L27/283 , H01L51/0048 , H01L51/057 , H01L51/0575
摘要： A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each of the transistors is configured as a vertical channel transistor.
-
公开(公告)号：US20230141861A1
公开(公告)日：2023-05-11
申请号：US18052344
申请日：2022-11-03
发明人： Joonhyuck Shin , Suhwan Kim , Kilmo Choi
CPC分类号： G06F12/1408 , G06F12/0246 , G06F13/28
摘要： An operating method of a data storge device including a buffer memory, a non-volatile memory, and a controller, includes receiving, from a host, an encryption request for data stored in the buffer memory, and performing an encryption operation in response to the encryption request, wherein the performing of the encryption operation comprises performing a program operation, the performing of the program operation comprises receiving a physical address of a buffer region of the non-volatile memory, generating encrypted data by causing an encryption module included in the controller to be in an on state to encrypt the data stored in the buffer memory, and programming the encrypted data in the buffer region of the non-volatile memory based on the physical address.
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.018 秒)
