Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15625178Application Date: 2017-06-16
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Publication No.: US10453949B2Publication Date: 2019-10-22
- Inventor: Takahiro Morikawa , Naoki Watanabe , Hiroyuki Yoshimoto
- Applicant: HITACHI, LTD.
- Applicant Address: JP Tokyo
- Assignee: HITACHI, LTD.
- Current Assignee: HITACHI, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge PC
- Priority: JP2016-145289 20160725
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/16 ; H01L29/66 ; H01L21/04 ; H01L29/20
Abstract:
A semiconductor device has an active region in which a plurality of unit cells are regularly arranged, each of the unit cells including: a channel region having a first conductivity type and formed over a front surface of a semiconductor substrate; a source region having a second conductivity type different from the first conductivity type and formed over the front surface of the semiconductor substrate in such a manner as to be in contact with the channel region; and a JFET region having the second conductivity type and is formed over the front surface of the semiconductor substrate on the opposite side of the channel region from the source region in such a manner as to be in contact with the channel region. The channel region is comprised of a first channel region and a second channel region higher than the first channel region in impurity concentration, over the front surface of the semiconductor substrate.
Public/Granted literature
- US20180026127A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-01-25
Information query
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