Invention Grant
- Patent Title: Display device
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Application No.: US15892513Application Date: 2018-02-09
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Publication No.: US10453965B2Publication Date: 2019-10-22
- Inventor: Yohei Yamaguchi , Isao Suzumura
- Applicant: Japan Display Inc.
- Applicant Address: JP Minato-ku
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-064916 20170329
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/49 ; H01L29/51 ; H01L27/146 ; H01L29/423 ; H01L27/32 ; G02F1/1362 ; G02F1/1368
Abstract:
The purpose of the present invention is to realize the TFT of the oxide semiconductor having a superior characteristics and high reliability during the product's life. The structure of the present invention is as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed on the first oxide semiconductor, the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a gate electrode is formed on the first aluminum film.
Public/Granted literature
- US20180286888A1 DISPLAY DEVICE Public/Granted day:2018-10-04
Information query
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