Invention Grant
- Patent Title: VCSEL structure with embedded heat sink
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Application No.: US16106037Application Date: 2018-08-21
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Publication No.: US10454241B2Publication Date: 2019-10-22
- Inventor: Tongbi T. Jiang , Weiping Li , Xiaofeng Fan
- Applicant: APPLE INC.
- Applicant Address: US CA Cupertino
- Assignee: APPLE INC.
- Current Assignee: APPLE INC.
- Current Assignee Address: US CA Cupertino
- Agency: Kligler & Associates
- Main IPC: H01S5/024
- IPC: H01S5/024 ; H01S5/42 ; H01S5/042 ; H01S5/183 ; H01S5/02 ; H01S5/026

Abstract:
An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.
Public/Granted literature
- US20190181610A1 VCSEL structure with embedded heat sink Public/Granted day:2019-06-13
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