Invention Grant
- Patent Title: Organoaminosilane precursors and methods for depositing films comprising same
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Application No.: US15479893Application Date: 2017-04-05
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Publication No.: US10460929B2Publication Date: 2019-10-29
- Inventor: Mark Leonard O'Neill , Manchao Xiao , Xinjian Lei , Richard Ho , Haripin Chandra , Matthew R. MacDonald , Meiliang Wang
- Applicant: Versum Materials US, LLC
- Applicant Address: US AZ Tempe
- Assignee: VERSUM MATERIALS US, LLC
- Current Assignee: VERSUM MATERIALS US, LLC
- Current Assignee Address: US AZ Tempe
- Agent Michael K. Boyer; David K. Benson
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C07F7/10 ; C23C16/24 ; C23C16/455 ; C09D5/24

Abstract:
Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
Public/Granted literature
- US20170207084A1 Organoaminosilane Precursors and Methods for Depositing Films Comprising Same Public/Granted day:2017-07-20
Information query
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