公开(公告)号：US12110436B2

公开(公告)日：2024-10-08

申请号：US17756223

申请日：2020-09-30

申请人： Versum Materials US, LLC

发明人： Chung-Yi Chang ,  Wen Dar Liu ,  Yi-Chia Lee

IPC分类号： C09K13/08 ,  C09K13/06 ,  H01L21/3213

CPC分类号： C09K13/08 ,  C09K13/06 ,  H01L21/32134

摘要： The disclosed and claimed subject matter relates to wet etchants exhibiting high copper and cobalt etching rates where the etching rate ratio between the two metals can be varied. The wet etchants have a composition comprising a formulation consisting of: at least one alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent with the amino and hydroxyl substituents attached to two different carbon atoms; at least one pH adjuster for adjusting the pH of the formulation to between approximately 9 and approximately 12; at least one chelating agent; and water.

公开(公告)号：US20240287257A1

公开(公告)日：2024-08-29

申请号：US18613569

申请日：2024-03-22

申请人： Versum Materials US, LLC

发明人： Manchao Xiao ,  Matthew R. MacDonald ,  Xinjian Lei ,  Meiliang Wang

IPC分类号： C08G77/26 ,  C07F7/10 ,  C07F7/18 ,  C07F7/21 ,  C08G77/04 ,  C08G77/06 ,  C08L83/08 ,  C23C16/40 ,  C23C16/455

CPC分类号： C08G77/26 ,  C07F7/10 ,  C07F7/1888 ,  C07F7/21 ,  C08G77/045 ,  C08G77/06 ,  C08L83/08 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45553 ,  C08G2390/40

摘要： Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.

公开(公告)号：US20240271040A1

公开(公告)日：2024-08-15

申请号：US18561030

申请日：2022-04-26

申请人： Versum Materials US, LLC

发明人： WEN DAR LIU ,  YI-CHIA LEE ,  AIPING WU

IPC分类号： C09K13/08 ,  H01L21/306

CPC分类号： C09K13/08 ,  H01L21/30604

摘要： The disclosed and claimed subject matter pertains to an etching solution including (i) water, (ii) at least one oxidizer, (iii) at least one fluoride ion source, (iv) at least one polyfunctional acid; (v) at least one corrosion inhibiting surfactant, (vi) at least one silane silicon oxide etch inhibitor and (vii) optionally at least one water-miscible organic solvent. The solutions are useful for the selective removal of silicon-germanium over poly silicon from a microelectronic device having such material(s) thereon during its manufacture.

公开(公告)号：US20240247090A1

公开(公告)日：2024-07-25

申请号：US18558788

申请日：2022-05-16

申请人： Versum Materials US, LLC

发明人： Gregor Larbig ,  PEER KIRSCH ,  MATTHIAS STENDER ,  XIAOBO SHI

IPC分类号： C08F226/06 ,  C08F212/14 ,  C08F220/34 ,  C08F220/56 ,  C08F220/58 ,  C09G1/02 ,  H01L21/321

CPC分类号： C08F226/06 ,  C08F212/26 ,  C08F220/34 ,  C08F220/56 ,  C08F220/58 ,  C09G1/02 ,  H01L21/3212

摘要： Synthesis of imidazolium-based poly(ionic liquid)s is disclosed. Chemical Mechanical Planarization (CMP) slurries comprise abrasives; activator; oxidizing agent; additive comprising imidazolium-based poly(ionic liquid); and water. The use of the synthesized imidazolium-based poly(ionic liquid)s in the CMP slurries reduces dishing and erosion in highly selective tungsten slurries.

公开(公告)号：US11976740B2

公开(公告)日：2024-05-07

申请号：US17905247

申请日：2021-03-03

申请人： VERSUM MATERIALS US, LLC

发明人： Mason Seidl ,  Meredith Elaine Flickinger ,  Thomas William Piltz ,  Shawn S. Cable ,  David Ebeling ,  Charles Michael Birtcher

IPC分类号： F16K27/02 ,  F16K11/04

CPC分类号： F16K27/0263 ,  F16K11/04

摘要： A compact valve block for a chemical container wherein the coaxial valve block has a housing that can accommodate three valve control mechanisms thus allowing for quick and effective purging without the need for an additional external conduit, valves, and coaxial injector. The advantage is a greatly reduced amount of wetted surface area inside the valve block leading to a significant decrease in the time it takes to purge a system thus allowing for quicker times to change chemical containers.

公开(公告)号：US11946148B2

公开(公告)日：2024-04-02

申请号：US17416328

申请日：2020-01-10

申请人： Versum Materials US, LLC

发明人： Wen Dar Liu ,  Yi-Chia Lee

IPC分类号： C23F11/06 ,  C23F1/32 ,  H01L21/02 ,  H01L21/3213

CPC分类号： C23F11/06 ,  C23F1/32 ,  H01L21/02068 ,  H01L21/32134

摘要： Described herein is an etching solution suitable for the selective removal of TiSiN over hafnium oxide from a microelectronic device, which consists essentially of: water; at least one alkaline ammonium compound selected from the group consisting of ammonium hydroxide, a quaternary ammonium hydroxide, ammonium fluoride, and a quaternary ammonium fluoride; at least one peroxide compound; a water-miscible organic solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, and a polyamine; and optionally at least one chelating agent.

公开(公告)号：US20240010915A1

公开(公告)日：2024-01-11

申请号：US17905340

申请日：2021-03-02

申请人： Versum Materials US, LLC

发明人： CHAO-HSIANG CHEN ,  JHIH KUEI GE ,  YI-CHIA LEE ,  WEN DAR LIU

IPC分类号： C09K13/08 ,  C23F1/26 ,  H01L21/311 ,  H01L21/3213

CPC分类号： C09K13/08 ,  C23F1/26 ,  H01L21/31111 ,  H01L21/32134

摘要： Etching composition suitable for etching titanium nitride and molybdenum from a microelectronic device, which includes, consists essentially of, or consists of, in effective amounts: water; HNO3; optionally, at least one chloride ion source selected from the group of NH4Cl and HCl; a base selected from the group of an alkanolamine, NH4OH, a quaternary ammonium hydroxide, and mixtures thereof; optionally, at least one fluoride ion source; optionally, at least one heteroaromatic compound; and optionally, at least one water-miscible solvent selected from the group of diethylene glycol butyl ether, sulfolane, and propylene carbonate.

公开(公告)号：US20230416911A1

公开(公告)日：2023-12-28

申请号：US18253169

申请日：2021-11-15

申请人： VERSUM MATERIALS US, LLC

发明人： RAVINDRA KANJOLIA ,  GUO LIU ,  MARK POTYEN ,  JACOB WOODRUFF ,  BHUSHAN ZOPE ,  XINJIAN LEI

IPC分类号： C23C16/455 ,  H01L21/02 ,  C23C16/40 ,  C23C16/04

CPC分类号： C23C16/45527 ,  H01L21/02164 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02304 ,  C23C16/401 ,  C23C16/04 ,  C23C16/0227

摘要： A thermal atomic layer deposition method for selectively deposition of silicon and oxygen containing dielectric film selected from silicon oxide or carbon doped silicon oxide abundantly on a dielectric surface but not less on a metal surface employing a silicon precursor having at least three isocyanato ligands.

公开(公告)号：US20230386825A1

公开(公告)日：2023-11-30

申请号：US18249831

申请日：2021-10-20

申请人： VERSUM MATERIALS US, LLC

发明人： MANCHAO XIAO ,  DANIEL P. SPENCE ,  XINJIAN LEI ,  WILLIAM ROBERT ENTLEY ,  RAYMOND NICHOLAS VRTIS ,  JENNIFER LYNN ANNE ACHTYL ,  ROBERT GORDON RIDGEWAY

IPC分类号： H01L21/02 ,  C08G77/12 ,  C09D183/04 ,  C07F7/08

CPC分类号： H01L21/02126 ,  H01L21/02271 ,  H01L21/02274 ,  C07F7/0896 ,  C08G77/12 ,  C09D183/04 ,  C07F7/0838 ,  H01L21/02216

摘要： A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxydisiloxane; and applying energy to the gaseous composition comprising alkoxydisiloxane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxydisiloxane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ˜2.50 to ˜3.30, an elastic modulus of from ˜6 to ˜35 GPa, and an at. % carbon of from ˜10 to ˜40 as measured by XPS.

公开(公告)号：US11725111B2

公开(公告)日：2023-08-15

申请号：US17507771

申请日：2021-10-21

申请人： VERSUM MATERIALS US, LLC

发明人： Manchao Xiao ,  Xinjian Lei ,  Ronald Martin Pearlstein ,  Haripin Chandra ,  Eugene Joseph Karwacki ,  Bing Han ,  Mark Leonard O'Neill

IPC分类号： C23C16/30 ,  C09D7/63 ,  C07F7/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C09D5/00 ,  C07F7/10 ,  H01L21/02

CPC分类号： C09D7/63 ,  C07F7/0896 ,  C07F7/10 ,  C09D5/00 ,  C23C16/30 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02211

摘要： Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).