A memory device includes a memory array comprising multi-level memory cells, and control circuitry coupled to the memory array. The control circuitry is configured to perform accelerated soft read operations on at least a portion of the memory array. A given one of the accelerated soft read operations directed to a non-upper page of the memory array comprises at least one hard read operation directed to a corresponding upper page of the memory array. The given accelerated soft read operation may comprise a sequence of multiple hard read operations including a hard read operation directed to the non-upper page and one or more hard read operations directed to the corresponding upper page.