Internal copy-back with read-verify

    公开(公告)号:US10353622B2

    公开(公告)日:2019-07-16

    申请号:US15448103

    申请日:2017-03-02

    摘要: Systems and methods for internal copy-back with read-verify are described. In one embodiment, a storage device includes a controller to select a first single level cell (SLC) page of a plurality of SLC pages on the storage device to transfer to a triple level cell (TLC) page. The controller, in conjunction with an error correcting code (ECC) decoder, read-verifies the first SLC page. Read-verifying the first SLC page includes reading the first SLC page to an internal page buffer, decoding the first SLC page read into the internal page buffer, determining a number of errors contained in the first SLC page based at least in part on the decoding, and verifying whether the number of errors contained in the first SLC page satisfies an error threshold. The controller transfers the first SLC page to the TLC page according to a result of read-verifying the first SLC page.

    Data compression using partial statistics

    公开(公告)号:US10303402B2

    公开(公告)日:2019-05-28

    申请号:US15226182

    申请日:2016-08-02

    IPC分类号: H03M7/30 G06F3/06

    摘要: A data storage device includes at least one data storage medium and a controller that is operably coupled to the at least one data storage medium. The controller receives the bit stream in a data storage device and performs a first level of compression on the received bit stream to obtain a symbol frame including a plurality of symbols. The controller encodes an initial portion of the plurality of symbols contained in the symbol frame by a fixed encoding scheme. The controller also collects statistics for the initial portion of the symbol frame. The controller then selects at least one data compression algorithm based on the collected statistics. The controller then performs compression encoding on a remaining portion of the symbol frame with the selected at least one data compression algorithm.

    NONVOLATILE MEMORY DATA RECOVERY AFTER POWER FAILURE
    7.
    发明申请
    NONVOLATILE MEMORY DATA RECOVERY AFTER POWER FAILURE 审中-公开
    电源故障后的非易失性存储器数据恢复

    公开(公告)号:US20170038985A1

    公开(公告)日:2017-02-09

    申请号:US15298636

    申请日:2016-10-20

    IPC分类号: G06F3/06 G11C16/10 G11C16/26

    摘要: A method for recovery after a power failure. The method generally includes a step of searching at least some of a plurality of pages of a memory to find a first erased page in response to an unsafe power down. A step may move stored data located between a particular word line in the memory that contains the first erased page and a previous word line that is at least two word lines before the particular word line. Another step may write new data starting in a subsequent word line that is the at least two word lines after the particular word line that contains the first erased page.

    摘要翻译: 断电后的恢复方法。 该方法通常包括搜索存储器的多个页面中的至少一些以响应于不安全断电来查找第一擦除页面的步骤。 步骤可以将位于包含第一被擦除页面的存储器中的特定字线和位于特定字线之前的至少两个字线的前一字线之间的存储数据移动。 另一步骤可以在随后的字线中开始的新数据,该后续字线是包含第一个被擦除页面的特定字线之后的至少两个字线。

    Eliminating or reducing programming errors when programming flash memory cells
    8.
    发明授权
    Eliminating or reducing programming errors when programming flash memory cells 有权
    在编程闪存单元时,消除或减少编程错误

    公开(公告)号:US09477423B2

    公开(公告)日:2016-10-25

    申请号:US14094900

    申请日:2013-12-03

    IPC分类号: G06F3/06 G11C11/56

    CPC分类号: G06F3/065 G11C11/5628

    摘要: Mis-programming of MSB data in flash memory is avoided by maintaining a copy of LSB page data that has been written to flash memory and using the copy rather than the LSB page data read out of the flash cells in conjunction with the MSB values to determine the proper reference voltage ranges to be programmed into the corresponding flash cells. Because the copy is free of errors, using the copy in conjunction with the MSB values to determine the proper reference voltage ranges for the flash cells ensures that mis-programming of the reference voltage ranges will not occur.

    摘要翻译: 通过将已写入闪速存储器的LSB页数据的副本与使用从闪存单元读出的LSB页数据结合MSB值来复制而不是使用复制而避免MSB数据的错误编程,以确定 正确的参考电压范围被编程到相应的闪存单元中。 由于复印件没有错误,因此使用复印件与MSB值一起确定闪存单元的正确参考电压范围,确保不会发生参考电压范围的错误编程。

    Mixed granularity higher-level redundancy for non-volatile memory
    10.
    发明授权
    Mixed granularity higher-level redundancy for non-volatile memory 有权
    非易失性存储器的混合粒度更高级冗余

    公开(公告)号:US09323612B2

    公开(公告)日:2016-04-26

    申请号:US14507140

    申请日:2014-10-06

    IPC分类号: G06F11/00 G06F11/10 G11C29/52

    摘要: Mixed-granularity higher-level redundancy for NVM provides improved higher-level redundancy operation with better error recovery and/or reduced redundancy information overhead. For example, pages of the NVM that are less reliable, such as relatively more prone to errors, are operated in higher-level redundancy modes having relatively more error protection, at a cost of relatively more redundancy information. Concurrently, blocks of the NVM that are more reliable are operated in higher-level redundancy modes having relatively less error protection, at a cost of relatively less redundancy information. Compared to techniques that operate the entirety of the NVM in the higher-level redundancy modes having relatively less error protection, techniques described herein provide better error recovery. Compared to techniques that operate the entirety of the NVM in the higher-level redundancy modes having relatively more error protection, the techniques described herein provide reduced redundancy information overhead.

    摘要翻译: NVM的混合级别更高级别的冗余提供了更高级别的冗余操作,具有更好的错误恢复和/或减少的冗余信息开销。 例如,以相对更多的冗余信息为代价,具有较不可靠性的诸如相对更易于出现错误的NVM的页面在具有相对更多的错误保护的较高级冗余模式中操作。 同时,更具可靠性的NVM块以牺牲相对较少的冗余信息为代价的具有相对较少的错误保护的较高级冗余模式运行。 与在较高级冗余模式下操作整个NVM的技术相比,具有相对更少的错误保护的技术相比,本文所述的技术提供更好的错误恢复。 与在具有相对更多的错误保护的较高级别冗余模式中操作NVM的整体的技术相比,本文所描述的技术提供减少的冗余信息开销。