Invention Grant
- Patent Title: Semiconductor device capable of suppressing cracks of through-hole protective film and short circuit of adjacent through-electrodes
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Application No.: US16078131Application Date: 2017-02-23
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Publication No.: US10468322B2Publication Date: 2019-11-05
- Inventor: Kazuyuki Kakuta , Hisanori Yokura , Minoru Murata
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2016-41427 20160303
- International Application: PCT/JP2017/006898 WO 20170223
- International Announcement: WO2017/150343 WO 20170908
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L21/3205 ; H01L21/768 ; H01L29/84 ; G01L9/00 ; H01L21/02 ; H01L21/027 ; H01L21/266 ; H01L21/3065 ; H01L21/311 ; H01L21/324 ; H01L21/56 ; H01L23/48 ; H01L23/528 ; H01L23/60 ; H01L23/544
Abstract:
A semiconductor device includes: a first substrate having connectors at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connectors; through-electrodes respectively arranged at through-holes and electrically connected with the connectors; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.
Public/Granted literature
- US20190051575A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-02-14
Information query
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