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公开(公告)号：US09835507B2
公开(公告)日：2017-12-05
申请号：US14910005
申请日：2014-08-01
申请人： DENSO CORPORATION
CPC分类号： G01L9/0042 , G01L9/0054
摘要： A dynamic quantity sensor includes a first substrate and a second substrate. The first substrate has one surface, another surface opposite to the one surface, and a depressed portion defining a thin portion. The second substrate has one surface attached to the first substrate and a recessed portion disposed corresponding to the depressed portion. At least a part of a first projection line obtained by projecting the recessed portion is disposed outside of a second projection line obtained by projecting a boundary line between side walls of the depressed portion and the thin portion. The thin portion disposed inside the periphery of the recessed portion provides a film portion which is displaceable corresponding to a physical quantity applied to the film portion, and a region sandwiched between the film portion and a portion connected to the periphery of the recessed portion provides a stress release region.
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公开(公告)号：US10468322B2
公开(公告)日：2019-11-05
申请号：US16078131
申请日：2017-02-23
申请人： DENSO CORPORATION
发明人： Kazuyuki Kakuta , Hisanori Yokura , Minoru Murata
IPC分类号： H01L23/31 , H01L21/3205 , H01L21/768 , H01L29/84 , G01L9/00 , H01L21/02 , H01L21/027 , H01L21/266 , H01L21/3065 , H01L21/311 , H01L21/324 , H01L21/56 , H01L23/48 , H01L23/528 , H01L23/60 , H01L23/544
摘要： A semiconductor device includes: a first substrate having connectors at a first surface; a second substrate bonded with the first substrate having through-holes in a stacking direction of the first and second substrates for respectively exposing the connectors; through-electrodes respectively arranged at through-holes and electrically connected with the connectors; and a protective film for integrally covering the through-electrodes. Frame-shaped slits are formed to respectively surround the through-holes when viewed in a normal direction with respect to the first surface of the first substrate. The protective film is separated by the slit into a region inside the slit and a region outside the slit.
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公开(公告)号：US09944515B2
公开(公告)日：2018-04-17
申请号：US15528124
申请日：2016-02-03
申请人： DENSO CORPORATION
发明人： Yutaka Hayakawa , Hisanori Yokura
CPC分类号： B81C1/00357 , B81B2201/0264 , B81B2203/0127 , G01L9/0042 , G01L9/0051 , H01L21/187 , H01L21/2007 , H01L21/76251
摘要： A manufacturing method of a semiconductor device, in which a vacuum-pressure airtight chamber is defined by a space between a first substrate and a recessed portion of a second substrate, includes preparing the first substrate and the second substrate both of which contain silicon, joining the two substrates together, performing a heat treatment to emit hydrogen gas from the airtight chamber, and generating OH groups on the substrates before the joining. In the joining of the substrates together, the OH groups are bonded together to generate covalent bonds, and in the heat treatment, a part on which the OH groups are generated is heated at a temperature rise rate of 1° C./sec or smaller until a temperature of the substrate increases to 700° C. or higher, and a heating temperature and heating time are adjusted to emit hydrogen gas from the airtight chamber.
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公开(公告)号：US11054326B2
公开(公告)日：2021-07-06
申请号：US16511115
申请日：2019-07-15
申请人： DENSO CORPORATION
发明人： Yutaka Hayakawa , Hisanori Yokura
摘要： In a physical quantity sensor, a first substrate has a recess depressed from a second surface to provide a thin film section adjacent to a first surface, and a second substrate has a first surface bonded to the first surface of the first substrate, and has a hollow depressed from the first surface and facing the recess. The recess and the hollow have such sizes that a projected line defined by projecting an end of a bottom surface in the recess to the first surface of the first substrate surrounds an open end of the hollow. When the thin film section is displaced toward the hollow, a maximum tensile stress is generated at a position on a rear surface of the thin film section intersecting an extended line along a normal direction to the first surface of the first substrate and passing through the open end of the hollow.
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公开(公告)号：US20150228540A1
公开(公告)日：2015-08-13
申请号：US14424118
申请日：2013-09-03
申请人： DENSO CORPORATION
发明人： Takashi Katsumata , Hisanori Yokura
IPC分类号： H01L21/768 , B81C1/00 , H01L21/311 , H01L21/306 , H01L21/308
CPC分类号： H01L21/76898 , B81C1/00095 , B81C1/00269 , B81C2203/0118 , B81C2203/0792 , H01L21/30604 , H01L21/308 , H01L21/31116 , H01L21/31144 , H01L2924/0002 , H01L2924/00
摘要： In a method for producing a semiconductor device having a through electrode structure, a masking material is formed so as to bridge over a through hole formed in a second semiconductor substrate, and a hole is formed in the masking material at a position corresponding to the through hole. A contact hole is formed in an insulating film via this hole. In such a method, even if there is a large level difference from the surface of the second semiconductor substrate to the bottom of the through hole, only the masking material bridged over the through hole is exposed by photolithography. Therefore, photolithography for a large level difference is not necessary. As a result, the hole can be formed in the masking material successfully, and the contact hole can be formed successively by an anisotropic dry etching via this hole, even in the case where etching for a large level difference is performed.
摘要翻译： 在具有贯通电极结构的半导体装置的制造方法中，形成遮蔽材料，以形成在第二半导体基板上形成的通孔上方，并且在掩模材料的与贯通电极对应的位置形成有孔 孔。 通过该孔在绝缘膜中形成接触孔。 在这种方法中，即使从第二半导体衬底的表面到通孔的底部存在较大的电平差，只有桥接在通孔上的掩模材料通过光刻曝光。 因此，不需要用于大电平差的光刻。 结果，可以成功地在掩模材料中形成孔，并且即使在进行大电平差的蚀刻的情况下，也可以通过该孔的各向异性干法蚀刻连续形成接触孔。
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公开(公告)号：US20150042319A1
公开(公告)日：2015-02-12
申请号：US14390413
申请日：2013-04-17
申请人： DENSO CORPORATION
CPC分类号： G01R35/00 , B82Y25/00 , G01R33/093 , G01R33/096 , G01R33/098
摘要： A TMR element and a corrective AMR element are series-connected between a power supply and a ground. The resistance value of the corrective AMR element is set so as to offset an output error in the rotation angle of an external magnetic field, which is included in the resistance value of the TMR element. The resistance value of the corrective AMR element is smaller than that of the TMR element. An increased voltage can be applied from the power supply to the TMR element. It is possible to increase, in the resistance value of the TMR element, the amount of change that depends on the rotation angle of the external magnetic field. This makes it possible to increase, in the output of a magnetic sensor, the amount of change that depends on the rotation angle of the external magnetic field. The sensitivity of the magnetic sensor can be increased.
摘要翻译： TMR元件和校正AMR元件串联连接在电源和地之间。 校正AMR元件的电阻值被设定为抵消包含在TMR元件的电阻值中的外部磁场的旋转角度的输出误差。 校正AMR元件的电阻值小于TMR元件的电阻值。 可以从电源向TMR元件施加增加的电压。 可以在TMR元件的电阻值中增加取决于外部磁场的旋转角度的变化量。 这使得可以在磁传感器的输出中增加取决于外部磁场的旋转角度的变化量。 可以提高磁传感器的灵敏度。
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公开(公告)号：US09349644B2
公开(公告)日：2016-05-24
申请号：US14424118
申请日：2013-09-03
申请人： DENSO CORPORATION
发明人： Takashi Katsumata , Hisanori Yokura
IPC分类号： H01L21/30 , H01L21/768 , H01L21/311 , B81C1/00 , H01L21/306 , H01L21/308
CPC分类号： H01L21/76898 , B81C1/00095 , B81C1/00269 , B81C2203/0118 , B81C2203/0792 , H01L21/30604 , H01L21/308 , H01L21/31116 , H01L21/31144 , H01L2924/0002 , H01L2924/00
摘要： In a method for producing a semiconductor device having a through electrode structure, a masking material is formed so as to bridge over a through hole formed in a second semiconductor substrate, and a hole is formed in the masking material at a position corresponding to the through hole. A contact hole is formed in an insulating film via this hole. In such a method, even if there is a large level difference from the surface of the second semiconductor substrate to the bottom of the through hole, only the masking material bridged over the through hole is exposed by photolithography. Therefore, photolithography for a large level difference is not necessary. As a result, the hole can be formed in the masking material successfully, and the contact hole can be formed successively by an anisotropic dry etching via this hole, even in the case where etching for a large level difference is performed.
摘要翻译： 在具有贯通电极结构的半导体装置的制造方法中，形成遮蔽材料，以形成在第二半导体基板上形成的通孔上方，并且在掩模材料的与贯通电极对应的位置形成有孔 孔。 通过该孔在绝缘膜中形成接触孔。 在这种方法中，即使从第二半导体衬底的表面到通孔的底部存在较大的电平差，只有桥接在通孔上的掩模材料通过光刻曝光。 因此，不需要用于大电平差的光刻。 结果，可以成功地在掩模材料中形成孔，并且即使在进行大电平差的蚀刻的情况下，也可以通过该孔的各向异性干法蚀刻连续形成接触孔。
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8.发明授权公开(公告)号：US09105753B2
公开(公告)日：2015-08-11
申请号：US13957738
申请日：2013-08-02
申请人： DENSO CORPORATION
发明人： Masaya Tanaka , Hisanori Yokura
IPC分类号： H01L29/82 , H01L29/76 , H01L21/00 , G01L9/06 , H01L29/84 , G01L9/00 , H01L29/8605 , H01L27/06
CPC分类号： H01L29/84 , G01L9/0042 , G01L9/06 , H01L27/0611 , H01L29/8605
摘要： A semiconductor physical quantity sensor includes (i) a semiconductor substrate having a first conductive type, (ii) a diaphragm portion disposed in the semiconductor substrate, (iii) a sensing portion disposed in the diaphragm portion, (iv) a well layer having a second conductive type, and (v) a back flow prevention element. The well layer is disposed in a surface portion of the semiconductor substrate, and corresponds to the diaphragm portion. The back flow prevention element is provided by a MOSFET, a JFET, a MESFET, or a HEMT. The back flow prevention element includes two second conductive diffused portions and a gate electrode. The back flow prevention element is arranged on a first electrical wiring, which provides a passage for applying a predetermined voltage to the well layer from an external circuit. The back flow prevention element turns on based on a voltage applied to the gate electrode.
摘要翻译： 半导体物理量传感器包括（i）具有第一导电类型的半导体衬底，（ii）设置在半导体衬底中的隔膜部分，（iii）设置在隔膜部分中的感测部分，（iv）具有 第二导电类型，和（v）防逆流元件。 阱层设置在半导体衬底的表面部分中，并且对应于膜片部分。 背面防流体元件由MOSFET，JFET，MESFET或HEMT提供。 防回流元件包括两个第二导电扩散部分和栅电极。 后防流体元件布置在第一电线上，其提供从外部电路向阱层施加预定电压的通道。 背流防止元件基于施加到栅电极的电压而导通。
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公开(公告)号：US08785231B2
公开(公告)日：2014-07-22
申请号：US13748734
申请日：2013-01-24
申请人： DENSO CORPORATION
发明人： Kazuhiko Sugiura , Tetsuo Fujii , Hisanori Yokura
CPC分类号： B81C1/00134 , B81B2207/095 , B81C1/00269 , B81C1/00301 , H01L2224/48463 , H01L2924/14 , H01L2924/19041 , H01L2924/30105
摘要： A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.
摘要翻译： 半导体器件包括传感器部分，帽部分和离子注入层。 传感器部分在表面的表面部分具有传感器结构。 盖部具有彼此相对的第一和第二表面，并且包括通孔。 传感器部分的表面与盖部分的第一表面接合，使得传感器结构被密封在传感器部分和盖部分之间。 离子注入层位于帽部的第二表面上。 通孔从第一表面延伸到第二表面，并通过离子注入层暴露。
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公开(公告)号：US09664768B2
公开(公告)日：2017-05-30
申请号：US14390413
申请日：2013-04-17
申请人： DENSO CORPORATION
CPC分类号： G01R35/00 , B82Y25/00 , G01R33/093 , G01R33/096 , G01R33/098
摘要： A TMR element and a corrective AMR element are series-connected between a power supply and a ground. The resistance value of the corrective AMR element is set so as to offset an output error in the rotation angle of an external magnetic field, which is included in the resistance value of the TMR element. The resistance value of the corrective AMR element is smaller than that of the TMR element. An increased voltage can be applied from the power supply to the TMR element. It is possible to increase, in the resistance value of the TMR element, the amount of change that depends on the rotation angle of the external magnetic field. This makes it possible to increase, in the output of a magnetic sensor, the amount of change that depends on the rotation angle of the external magnetic field. The sensitivity of the magnetic sensor can be increased.
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