Invention Grant
- Patent Title: In-situ oxidized NiO as electrode surface for high k MIM device
-
Application No.: US14649334Application Date: 2013-09-30
-
Publication No.: US10475575B2Publication Date: 2019-11-12
- Inventor: Bryan C. Hendrix , Weimin Li , James Anthony O'Neill
- Applicant: ENTEGRIS, INC.
- Applicant Address: US MA Billerica
- Assignee: ENTEGRIS, INC.
- Current Assignee: ENTEGRIS, INC.
- Current Assignee Address: US MA Billerica
- Agency: Entegris, Inc.
- International Application: PCT/US2013/062746 WO 20130930
- International Announcement: WO2014/088691 WO 20140612
- Main IPC: H01G4/10
- IPC: H01G4/10 ; H01G4/01 ; C23C16/44 ; C23C16/455 ; H01L49/02
Abstract:
A high dielectric constant metal-insulator structure, including an electrode comprising NiOx wherein 1
Public/Granted literature
- US20150318108A1 IN-SITU OXIDIZED NiO AS ELECTRODE SURFACE FOR HIGH k MIM DEVICE Public/Granted day:2015-11-05
Information query
