Invention Grant
- Patent Title: Patterning method
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Application No.: US15972223Application Date: 2018-05-06
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Publication No.: US10475649B2Publication Date: 2019-11-12
- Inventor: Yu-Chen Chuang , Fu-Che Lee , Ming-Feng Kuo , Cheng-Yu Wang , Hsien-Shih Chu , Li-Chiang Chen
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201810342025 20180417
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/768 ; H01L21/02 ; H01L21/027
Abstract:
A patterning method includes the following steps. A hard mask layer is formed on a substrate. Mandrels are formed on the hard mask layer. Mask patterns are formed on the mandrels. Each of the mask patterns is formed on one of the mandrels. Spacers are formed on the hard mask layer. Each of the spacers is formed on a sidewall of one of the mandrels and on a sidewall of one of the mask patterns. A cover layer covering the hard mask layer, the spacers and the mask patterns is formed. A planarization process is performed to remove the cover layer on the mask patterns and the spacer and remove the mask patterns. A part of the cover layer remains between the spacers after the planarization process. The mandrels and the cover layer are removed after the planarization process.
Public/Granted literature
- US20190318929A1 PATTERNING METHOD Public/Granted day:2019-10-17
Information query
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