Invention Grant
- Patent Title: Method of forming semiconductor device
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Application No.: US16158316Application Date: 2018-10-12
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Publication No.: US10475662B2Publication Date: 2019-11-12
- Inventor: Feng-Yi Chang , Wei-Hsin Liu , Ying-Chih Lin , Jui-Min Lee , Gang-Yi Lin , Fu-Che Lee
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201711262212 20171204
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/308 ; H01L27/105 ; H01L21/033

Abstract:
A method of forming a semiconductor memory device includes following steps. First of all, a target layer is provided, and a mask structure is formed on the target layer, with the mask structure including a first mask layer a sacrificial layer and a second mask layer. The first mask layer and the second mask layer include the same material but in different containing ratio. Next, the second mask layer and the sacrificial layer are patterned, to form a plurality of mandrels. Then, a plurality of spacer patterns are formed to surround the mandrels, and then transferred into the first mask layer to form a plurality of opening not penetrating the first mask layer. Finally, the first mask layer is used as a mask to etch the target layer, to form a plurality of target patterns.
Public/Granted literature
- US20190172722A1 METHOD OF FORMING SEMICONDUCTOR DEVICE Public/Granted day:2019-06-06
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