- Patent Title: Electrostatic chuck device, and semiconductor manufacturing device
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Application No.: US15550205Application Date: 2016-02-03
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Publication No.: US10475688B2Publication Date: 2019-11-12
- Inventor: Kazunori Ishimura , Kazuto Ando , Kentaro Takahashi , Yuhki Kinpara , Shinichi Maeta , Mamoru Kosakai
- Applicant: SUMITOMO OSAKA CEMENT CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO OSAKA CEMENT CO., LTD.
- Current Assignee: SUMITOMO OSAKA CEMENT CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2015-029274 20150218; JP2015-044587 20150306
- International Application: PCT/JP2016/053263 WO 20160203
- International Announcement: WO2016/132909 WO 20160825
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/67 ; H01L21/687

Abstract:
An electrostatic chuck part of an electrostatic chuck device has an electrostatic chuck part inner peripheral surface surrounding an opening of a chuck part through-hole, and an electrostatic chuck part outer peripheral surface surrounding the electrostatic chuck part inner peripheral surface. An insulator has an insulator main body in which an insulator through-hole having an opening on the electrostatic chuck part side is formed, an insulator inner end face, and an insulator outer end face which faces the electrostatic chuck part outer peripheral surface. The insulator inner end face and the electrostatic chuck part inner peripheral surface are in contact with each other, or an adhesion layer or a plasma-resistant adhesive layer extends in a gap between the insulator inner end face and the electrostatic chuck part inner peripheral surface. The plasma-resistant adhesive layer is formed between the electrostatic chuck part outer peripheral surface and the insulator outer end face.
Public/Granted literature
- US20180025933A1 ELECTROSTATIC CHUCK DEVICE, AND SEMICONDUCTOR MANUFACTURING DEVICE Public/Granted day:2018-01-25
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