Invention Grant
- Patent Title: Multi-threshold voltage semiconductor device
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Application No.: US15391822Application Date: 2016-12-27
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Publication No.: US10475738B2Publication Date: 2019-11-12
- Inventor: Kung-Hong Lee , Mu-Kai Tsai , Chung-Hsing Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L49/02 ; H01L27/088 ; H01L27/092 ; H01L21/8234 ; H01L21/8238 ; H01L29/78
Abstract:
A semiconductor device preferably includes: a first metal-oxide semiconductor (MOS) transistor on a substrate; a first ferroelectric (FE) layer connected to the first MOS transistor; a second MOS transistor on the substrate; and a second FE layer connected to the second MOS transistor. Preferably, the first FE layer and the second FE layer include different capacitance.
Public/Granted literature
- US20180182860A1 MULTI-THRESHOLD VOLTAGE SEMICONDUCTOR DEVICE Public/Granted day:2018-06-28
Information query
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