Invention Grant
- Patent Title: Semiconductor device and method of manufacturing thereof
-
Application No.: US15836889Application Date: 2017-12-10
-
Publication No.: US10475883B2Publication Date: 2019-11-12
- Inventor: Masaru Kadoshima , Masahiko Fujisawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2016-255683 20161228
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/78 ; H01L29/66 ; H01L29/08 ; H01L23/522 ; H01L21/762 ; H01L21/768 ; H01L21/02 ; H01L21/84 ; H01L29/786 ; H01L29/417
Abstract:
In a semiconductor device, a width of a second epitaxial layer is greater than a width of a first epitaxial layer, and a thickness of an end portion of the second epitaxial layer, which is in contact with an element isolation portion, is smaller than a thickness of an end portion of the first epitaxial layer, which is in contact with the element isolation portion, and a second shortest distance between the element isolation portion and a second plug is greater than a first shortest distance between the element isolation portion and a first plug.
Public/Granted literature
- US20180182850A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2018-06-28
Information query
IPC分类:
