Invention Grant
- Patent Title: Method of forming a layer and a method of fabricating a variable resistance memory device using the same
-
Application No.: US15927481Application Date: 2018-03-21
-
Publication No.: US10476000B2Publication Date: 2019-11-12
- Inventor: Jeonghee Park , Kyoung Sun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2017-0036231 20170322
- Main IPC: C23C16/34
- IPC: C23C16/34 ; H01L45/00 ; H01L27/24 ; C23C16/455 ; G11C13/00
Abstract:
A method of forming a target layer in semiconductor fabrication is disclosed that includes steps of forming a first layer by performing a first process at least one time and forming a second layer by performing a second process at least one time, wherein the first process may include supplying a first source gas, supplying a second source gas several times, and supplying an inert gas several times.
Public/Granted literature
- US20180277758A1 METHOD OF FORMING A LAYER AND A METHOD OF FABRICATING A VARIABLE RESISTANCE MEMORY DEVICE USING THE SAME Public/Granted day:2018-09-27
Information query
IPC分类:
