Invention Grant
- Patent Title: Quantum cascade laser
-
Application No.: US16011928Application Date: 2018-06-19
-
Publication No.: US10476235B2Publication Date: 2019-11-12
- Inventor: Jun-ichi Hashimoto
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2017-122339 20170622; JP2017-125259 20170627
- Main IPC: H01S5/34
- IPC: H01S5/34 ; H01S5/022 ; H01S5/028 ; H01S5/227 ; H01S5/343 ; H01S5/12 ; H01S5/02 ; H01S5/042 ; H01S5/40 ; H01S5/22

Abstract:
A quantum cascade laser includes: a semiconductor substrate including principal and back surfaces; a semiconductor laminate having a laminate end face, the laminate end face and, the substrate end face extending along a reference plane intersecting a second direction that intersects the first direction; a first electrode disposed on the semiconductor laminate, the semiconductor laminate being disposed between the first electrode and the semiconductor substrate; a second electrode disposed on the back surface; a first insulating film disposed on the laminate end face, the substrate end face, and the first electrode; a metal film disposed on the first insulating film and the laminate end face, the substrate end face, and the first electrode; and a second insulating film disposed on the second electrode, and on the substrate end face, the metal film being disposed between the first insulating film and the second insulating film.
Public/Granted literature
- US20180375292A1 QUANTUM CASCADE LASER Public/Granted day:2018-12-27
Information query