- Patent Title: Methods of depositing metal films using metal oxyhalide precursors
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Application No.: US16180817Application Date: 2018-11-05
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Publication No.: US10483116B2Publication Date: 2019-11-19
- Inventor: Xinyu Fu , David Knapp , David Thompson , Jeffrey W. Anthis , Mei Chang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/285
- IPC: H01L21/285 ; C23C16/08 ; C23C16/455 ; C23C16/06 ; H01L29/786
Abstract:
Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.
Public/Granted literature
- US20190088489A1 Methods of Depositing Metal Films Using Metal Oxyhalide Precursors Public/Granted day:2019-03-21
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