公开(公告)号：US20230227968A1

公开(公告)日：2023-07-20

申请号：US18190246

申请日：2023-03-27

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52 ,  C23C16/507 ,  C23C16/14

CPC classification number: C23C16/42 ,  C23C16/513 ,  C23C16/45536 ,  C23C16/52 ,  C23C16/507 ,  C23C16/45542 ,  C23C16/14

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US11530478B2

公开(公告)日：2022-12-20

申请号：US16795431

申请日：2020-02-19

Applicant: Applied Materials, Inc.

Inventor： Rajeev Bajaj ,  Mei Chang ,  Deenesh Padhi

IPC: C23C16/30 ,  C23C16/44

Abstract: A method of depositing a coating and a layered structure is provided. A coating is deposited on a substrate to make a layered structure, such that an interface between the coating and the substrate is formed. The coating includes silicon, oxygen, and carbon, where the carbon doping in the coating increases between the interface and the top surface of the coating. The top surface of the coating is inherently hydrophobic and icephobic, and reduces the wetting of water or ice film on the layered structure, without requiring reapplication of the coating.

公开(公告)号：US20210225640A1

公开(公告)日：2021-07-22

申请号：US17225311

申请日：2021-04-08

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang ,  Xiaoxiong Yuan

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  C23C14/54 ,  C23C14/50 ,  C23C14/02

Abstract: A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.

公开(公告)号：US10600685B2

公开(公告)日：2020-03-24

申请号：US15823422

申请日：2017-11-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Daping Yao ,  Jiang Lu ,  Can Xu ,  Paul F. Ma ,  Mei Chang

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/532 ,  H01L21/285

Abstract: In some embodiments, a method of forming a cobalt layer on a substrate disposed in a process chamber, includes: (a) exposing the substrate to a first process gas comprising a cobalt precursor and a hydrogen containing gas to grow a smooth cobalt layer on a first surface of the substrate and on sidewalls and a bottom surface of a feature formed in the first surface of the substrate; (b) purging the first process gas from the process chamber; and (c) annealing the substrate in a hydrogen atmosphere to fill in voids within the cobalt layer to form a void-free cobalt layer. In some embodiments, plasma treating the substrate in gas under low pressure and/or thermally baking the substrate in gas in an atmosphere under a low pressure, may be performed prior to anneal.

公开(公告)号：US10483116B2

公开(公告)日：2019-11-19

申请号：US16180817

申请日：2018-11-05

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

公开(公告)号：US10400335B2

公开(公告)日：2019-09-03

申请号：US15696969

申请日：2017-09-06

Applicant: Applied Materials, Inc.

Inventor： Zhenbin Ge ,  Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang

IPC: C23C16/455 ,  C23C16/44 ,  B08B9/032 ,  C23C14/22 ,  C23C16/52

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

公开(公告)号：US20190115254A1

公开(公告)日：2019-04-18

申请号：US16159128

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Ben-Li Sheu ,  Feng Q. Liu ,  Tae Hong Ha ,  Mei Chang ,  Shirish Pethe

IPC: H01L21/768 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

Abstract: Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.

公开(公告)号：US20180158686A1

公开(公告)日：2018-06-07

申请号：US15815932

申请日：2017-11-17

Applicant: Applied Materials, Inc.

Inventor： Avgerinos V. Gelatos ,  Takashi Kuratomi ,  Hyuck Lim ,  I-Cheng Chen ,  Mei Chang

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/50 ,  C23C16/08

CPC classification number: H01L21/28518 ,  C23C16/045 ,  C23C16/08 ,  C23C16/50 ,  C23C16/505 ,  H01L21/02068 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76879 ,  H01L21/76889

Abstract: Methods to selectively deposit titanium-containing films on silicon-containing surfaces in high aspect ratio features of substrates comprise plasma-enhanced chemical vapor deposition (PECVD) process at a plasma powers in the range of about 1 to less than about 700 mWatts/cm2 and frequencies in the range of about 10 kHz to about 50 MHz. The titanium films may be selectively deposited with a selectivity in the range of at least about 1.3:1 metallic silicon surfaces relative to silicon dioxide surfaces.

公开(公告)号：US20170275754A1

公开(公告)日：2017-09-28

申请号：US15471291

申请日：2017-03-28

Applicant: Applied Materials, Inc.

Inventor： Daping Yao ,  Kenric Choi ,  Xiaoxiong Yuan ,  Jiang Lu ,  Can Xu ,  Paul F. Ma ,  Mei Chang

IPC: C23C16/455 ,  F16K31/60 ,  F16K31/12

Abstract: Apparatus and methods for supplying a gas to a processing chamber are described. The apparatus comprises an inlet line and an outlet line, each with two valves, in fluid communication an ampoule. A bypass line connects the inlet valve and outlet valve closest to the ampoule. The apparatus and methods of use allow a precursor residue to be removed from the delivery lines of a processing chamber.

公开(公告)号：US09653318B2

公开(公告)日：2017-05-16

申请号：US15007175

申请日：2016-01-26

Applicant: Applied Materials, Inc.

Inventor： David T. Or ,  Joshua Collins ,  Mei Chang

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/326 ,  H01L21/324

CPC classification number: H01L21/31116 ,  H01L21/02057 ,  H01L21/324 ,  H01L21/326

Abstract: Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products.