Invention Grant
- Patent Title: Ultra thin helmet dielectric layer for maskless air gap and replacement ILD processes
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Application No.: US15745235Application Date: 2015-09-23
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Publication No.: US10483160B2Publication Date: 2019-11-19
- Inventor: Jeffery D. Bielefeld , Manish Chandhok , Asad Iqbal , John D. Brooks
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2015/051767 WO 20150923
- International Announcement: WO2017/052540 WO 20170330
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/764 ; H01L23/532 ; H01L21/02
Abstract:
A helmet layer is deposited on a plurality of conductive features on a first dielectric layer on a substrate. A second dielectric layer is deposited on a first portion of the helmet layer. An etch stop layer is deposited on a second portion the helmet layer.
Public/Granted literature
- US20180226289A1 ULTRA THIN HELMET DIELECTRIC LAYER FOR MASKLESS AIR GAP AND REPLACEMENT ILD PROCESSES Public/Granted day:2018-08-09
Information query
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