公开(公告)号：US11018054B2

公开(公告)日：2021-05-25

申请号：US16486612

申请日：2017-04-12

申请人： Intel Corporation

发明人： Daniel J. Zierath ,  Flavio Griggio ,  John D. Brooks

IPC分类号： H01L21/76 ,  H01L27/06 ,  H01L21/768 ,  H01L21/321 ,  H01L23/532

摘要： Disclosed herein are integrated circuit (IC) interconnects, as well as related devices and methods. For example, in some embodiments, an interconnect may include a first material and a second material distributed in the first material. A concentration of the second material may be greater proximate to the top surface than proximate to the bottom surface.

公开(公告)号：US20200013673A1

公开(公告)日：2020-01-09

申请号：US16486612

申请日：2017-04-12

申请人： Intel Corporation

发明人： Daniel J. Zierath ,  Flavio Griggio ,  John D. Brooks

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/321 ,  H01L27/06

摘要： Disclosed herein are integrated circuit (IC) interconnects, as well as related devices and methods. For example, in some embodiments, an interconnect may include a first material and a second material distributed in the first material. A concentration of the second material may be greater proximate to the top surface than proximate to the bottom surface.

公开(公告)号：US10483160B2

公开(公告)日：2019-11-19

申请号：US15745235

申请日：2015-09-23

申请人： Intel Corporation

发明人： Jeffery D. Bielefeld ,  Manish Chandhok ,  Asad Iqbal ,  John D. Brooks

IPC分类号： H01L21/768 ,  H01L21/764 ,  H01L23/532 ,  H01L21/02

摘要： A helmet layer is deposited on a plurality of conductive features on a first dielectric layer on a substrate. A second dielectric layer is deposited on a first portion of the helmet layer. An etch stop layer is deposited on a second portion the helmet layer.