Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US14689968Application Date: 2015-04-17
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Publication No.: US10515991B2Publication Date: 2019-12-24
- Inventor: Zen-Fong Huang , Volume Chien , Su-Hua Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A semiconductor structure includes a substrate including a first side and a second side disposed opposite to the first side and configured to receive an electromagnetic radiation, a barrier layer disposed over the second side of the substrate, a color filter disposed over the barrier layer, and a grid surrounding the color filter and disposed over the barrier layer, wherein the barrier layer is configured to absorb or reflect non-visible light in the electromagnetic radiation, and the barrier layer is disposed between the grid and the substrate.
Public/Granted literature
- US20160307950A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-10-20
Information query
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