- 专利标题： Field-effect transistor, display element, image display device, and system
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申请号： US15370392申请日： 2016-12-06
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公开(公告)号： US10516053B2公开(公告)日： 2019-12-24
- 发明人: Yukiko Abe , Naoyuki Ueda , Shinji Matsumoto , Ryoichi Saotome , Yuki Nakamura , Yuji Sone , Sadanori Arae , Minehide Kusayanagi
- 申请人： Yukiko Abe , Naoyuki Ueda , Shinji Matsumoto , Ryoichi Saotome , Yuki Nakamura , Yuji Sone , Sadanori Arae , Minehide Kusayanagi
- 申请人地址： JP Tokyo
- 专利权人： RICOH COMPANY, LTD.
- 当前专利权人： RICOH COMPANY, LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2015-239658 20151208; JP2016-235622 20161205
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/51 ; H01L29/24 ; H01L27/12 ; G02F1/1368 ; G09G3/36 ; G09G3/3225 ; G09G3/00 ; H01L29/49 ; H01L27/32
摘要：
A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed to be adjacent to the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, wherein the gate insulating layer contains a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid, and wherein the active layer has a carrier density of 4.0×1017/cm3 or more.
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