Invention Grant
- Patent Title: Semiconductor device with circumferential structure and method of manufacturing
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Application No.: US15872322Application Date: 2018-01-16
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Publication No.: US10522478B2Publication Date: 2019-12-31
- Inventor: Franco Mariani , Adolf Koller
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102017100827 20170117
- Main IPC: H01L21/268
- IPC: H01L21/268 ; H01L21/78 ; H01L29/04 ; H01L23/00 ; H01L23/58 ; H01L21/304
Abstract:
A circumferential embedded structure is formed by laser irradiation in a semiconductor substrate, which is of a semiconductor material. The embedded structure includes a polycrystalline structure of the semiconductor material, and surrounds a central portion of a semiconductor die. The semiconductor die including the embedded structure is separated from the semiconductor substrate.
Public/Granted literature
- US20180204808A1 Semiconductor Device with Circumferential Structure and Method of Manufacturing Public/Granted day:2018-07-19
Information query
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