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    Semiconductor device and method for manufacturing a semiconductor device
    3.
    发明授权
    Semiconductor device and method for manufacturing a semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号：US09356092B2

    公开(公告)日：2016-05-31

    申请号：US14025185

    申请日：2013-09-12

    申请人： Infineon Technologies AG

    发明人： Franco Mariani ,  Andreas Bauer ,  Reinhard Hess ,  Gerhard Leschik

    IPC分类号： H01L29/06 ,  H01L21/78

    CPC分类号： H01L29/06 ,  H01L21/78 ,  H01L29/0684

    摘要： A method includes providing a semiconductor wafer including multiple semiconductor chips, forming a first scribe line on a frontside of the semiconductor wafer, wherein the first scribe line has a first width and separates semiconductor chips of the semiconductor wafer, forming a second scribe line on the frontside of the semiconductor wafer, wherein the second scribe line has a second width and separates semiconductor chips of the semiconductor wafer, wherein the first scribe line and the second scribe line intersect in a crossing area which is greater than a product of the first width and the second width, and plasma etching the semiconductor wafer in the crossing area.

    摘要翻译： 一种方法包括提供包括多个半导体芯片的半导体晶片，在半导体晶片的前侧形成第一划线，其中第一划线具有第一宽度并分离半导体晶片的半导体芯片，在第二划线上形成第二划线 其中所述第二划线具有第二宽度并且分离所述半导体晶片的半导体芯片，其中所述第一划线和所述第二划线在交叉区域相交，所述交叉区域大于所述第一宽度和 第二宽度，并且在交叉区域等离子体蚀刻半导体晶片。

    METHOD OF PROCESSING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP
    4.
    发明申请
    METHOD OF PROCESSING A SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP 有权
    加工半导体衬底和半导体芯片的方法

    公开(公告)号：US20160211179A1

    公开(公告)日：2016-07-21

    申请号：US15000100

    申请日：2016-01-19

    申请人： Infineon Technologies AG

    发明人： Franco Mariani ,  Korbinian Kaspar

    IPC分类号： H01L21/78 ,  H01L21/304 ,  H01L23/00

    CPC分类号： H01L21/78 ,  H01L21/304 ,  H01L21/67092 ,  H01L21/67132 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386 ,  H01L2224/2902

    摘要： A method of processing a semiconductor substrate is provided. The method may include forming a film over a first side of a semiconductor substrate, forming at least one separation region in the semiconductor substrate between a first region and a second region of the semiconductor substrate, arranging the semiconductor substrate on a breaking device, wherein the breaking device comprises a breaking edge, and wherein the semiconductor substrate is arranged with the film facing the breaking device and in at least one alignment position with the at least one separation region aligned with the breaking edge, and forcing the semiconductor substrate to bend the first region with respect to the second region over the breaking edge until the film separates between the breaking edge and the at least one separation region.

    摘要翻译： 提供一种处理半导体衬底的方法。 该方法可以包括在半导体衬底的第一侧上形成膜，在半导体衬底的第一区域和第二区域之间的半导体衬底中形成至少一个分离区域，将半导体衬底布置在破坏器件上，其中 断开装置包括断裂边缘，并且其中半导体基板布置成使膜面向断开装置，并且至少一个对准位置与至少一个分离区域与断裂边缘对准，并迫使半导体基板弯曲第一 区域相对于断裂边缘上的第二区域直到膜在断裂边缘和至少一个分离区域之间分离。

    Semiconductor Device and Method for Manufacturing a Semiconductor Device
    5.
    发明申请
    Semiconductor Device and Method for Manufacturing a Semiconductor Device 有权
    半导体装置及半导体装置的制造方法

    公开(公告)号：US20150069576A1

    公开(公告)日：2015-03-12

    申请号：US14025185

    申请日：2013-09-12

    申请人： Infineon Technologies AG

    发明人： Franco Mariani ,  Andreas Bauer ,  Reinhard Hess ,  Gerhard Leschik

    IPC分类号： H01L29/06 ,  H01L21/78

    CPC分类号： H01L29/06 ,  H01L21/78 ,  H01L29/0684

    摘要： A method includes providing a semiconductor wafer including multiple semiconductor chips, forming a first scribe line on a frontside of the semiconductor wafer, wherein the first scribe line has a first width and separates semiconductor chips of the semiconductor wafer, forming a second scribe line on the frontside of the semiconductor wafer, wherein the second scribe line has a second width and separates semiconductor chips of the semiconductor wafer, wherein the first scribe line and the second scribe line intersect in a crossing area which is greater than a product of the first width and the second width, and plasma etching the semiconductor wafer in the crossing area.

    摘要翻译： 一种方法包括提供包括多个半导体芯片的半导体晶片，在半导体晶片的前侧形成第一划线，其中第一划线具有第一宽度并分离半导体晶片的半导体芯片，在第二划线上形成第二划线 其中所述第二划线具有第二宽度并且分离所述半导体晶片的半导体芯片，其中所述第一划线和所述第二划线在交叉区域相交，所述交叉区域大于所述第一宽度和 第二宽度，并且在交叉区域等离子体蚀刻半导体晶片。