- 专利标题: Switch device and storage unit
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申请号: US15559601申请日: 2016-03-16
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公开(公告)号: US10529777B2公开(公告)日: 2020-01-07
- 发明人: Hiroaki Sei , Kazuhiro Ohba
- 申请人: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- 申请人地址: JP Kanagawa
- 专利权人: Sony Semiconductor Solutions Corporation
- 当前专利权人: Sony Semiconductor Solutions Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Sheridan Ross P.C.
- 优先权: JP2015-073054 20150331
- 国际申请: PCT/JP2016/058390 WO 20160316
- 国际公布: WO2016/158430 WO 20161006
- 主分类号: H01L45/00
- IPC分类号: H01L45/00 ; H01L27/24 ; G11C13/00
摘要:
A switch device according to an embodiment of the technology includes a first electrode, a second electrode that faces the first electrode, and a switch layer provided between the first electrode and the second electrode. The switch layer includes a chalcogen element. The switch device further includes a diffusion suppressing layer that is in contact with at least a portion of a surface of the switch layer, and suppresses diffusion of oxygen into the switch layer.
公开/授权文献
- US20180204881A1 SWITCH DEVICE AND STORAGE UNIT 公开/授权日:2018-07-19
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