-
公开(公告)号：US11152428B2
公开(公告)日：2021-10-19
申请号：US16607764
申请日：2018-04-06
发明人： Minoru Ikarashi , Takeyuki Sone , Seiji Nonoguchi , Hiroaki Sei , Kazuhiro Ohba
摘要： There is provided a selection device that includes a first electrode, a second electrode opposed to the first electrode, a semiconductor layer provided between the first electrode and the second electrode, and including at least one kind of chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S), and at least one kind of first element selected from boron (B), aluminum (Al), gallium (Ga), phosphorus (P), arsenic (As), carbon (C), germanium (Ge), and silicon (Si), and a first heat bypass layer provided at least in a portion around the semiconductor layer between the first electrode and the second electrode and having higher thermal conductivity than the semiconductor layer.
-
公开(公告)号：US11018189B2
公开(公告)日：2021-05-25
申请号：US16490303
申请日：2018-03-15
IPC分类号： H01L47/00 , H01L27/24 , H01L23/528 , H01L27/11514 , H01L27/22
摘要： A storage apparatus includes a plurality of first wiring layers extending in one direction, a plurality of second wiring layers extending in another direction, and a plurality of memory cells provided in respective opposing regions in which the plurality of first wiring layers and the plurality of second wiring layers are opposed to each other. The plurality of memory cells each includes a selector element layer, a storage element layer, and an intermediate electrode layer provided between the selector element layer and the storage element layer. One or more of the selector element layer, the storage element layer, and the intermediate electrode layer is a common layer that is common between the plurality of memory cells, in which the plurality of memory cells is adjacent to each other and extends in the one direction or the other direction. The intermediate electrode layer includes a nonlinear resistive material.
-
公开(公告)号：US10403680B2
公开(公告)日：2019-09-03
申请号：US15559571
申请日：2016-03-16
发明人： Kazuhiro Ohba , Hiroaki Sei , Seiji Nonoguchi , Takeyuki Sone , Minoru Ikarashi
IPC分类号： H01L47/00 , H01L27/24 , H01L27/105 , H01L45/00 , H01L27/22
摘要： A switch device according to an embodiment of the technology includes a first electrode, a second electrode that is disposed to face the first electrode, and a switch layer that is provided between the first electrode and the second electrode. The switch layer contains a chalcogen element. The switch layer includes a first region and a second region which have different composition ratios of one or more of chalcogen elements or different types of the one or more of chalcogen elements. The first region is provided close to the first electrode. The second region is provided closer to the second electrode than the first region.
-
公开(公告)号：US11522132B2
公开(公告)日：2022-12-06
申请号：US16962875
申请日：2018-12-06
发明人： Kazuhiro Ohba , Seiji Nonoguchi , Hiroaki Sei , Takeyuki Sone , Minoru Ikarashi
摘要： A storage device includes a first electrode, a second electrode, and a storage layer. The second electrode is disposed to oppose the first electrode. The storage layer is provided between the first electrode and the second electrode, and includes one or more chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S), transition metal, and oxygen. The storage layer has a non-linear resistance characteristic, and the storage layer is caused to be in a low-resistance state by setting an application voltage to be equal to or higher than a predetermined threshold voltage and is caused to be in a high-resistance state by setting the application voltage to be lower than the predetermined threshold voltage to thereby have a rectification characteristic.
-
公开(公告)号：US11183633B2
公开(公告)日：2021-11-23
申请号：US16329294
申请日：2017-09-12
发明人： Hiroaki Sei , Kazuhiro Ohba , Takeyuki Sone , Seiji Nonoguchi , Minoru Ikarashi
IPC分类号： H01L45/00 , H01L27/24 , H01L27/22 , H01L21/8239 , G11C13/00 , H01L27/105
摘要： A switch device includes: a first electrode; a second electrode opposed to the first electrode; and a switch layer provided between the first electrode and the second electrode, and the switch layer includes one or more kinds of chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S) and one or more kinds of first elements selected from phosphorus (P) and arsenic (As), and further includes one or both of one or more kinds of second elements selected from boron (B) and carbon (C) and one or more kinds of third elements selected from aluminum (Al), gallium (Ga), and indium (In).
-
公开(公告)号：US10804321B2
公开(公告)日：2020-10-13
申请号：US16534062
申请日：2019-08-07
发明人： Kazuhiro Ohba , Hiroaki Sei , Seiji Nonoguchi , Takeyuki Sone , Minoru Ikarashi
IPC分类号： H01L47/00 , H01L27/24 , H01L27/105 , H01L27/22 , H01L45/00
摘要： A switch device according to an embodiment of the technology includes a first electrode, a second electrode that is disposed to face the first electrode, and a switch layer that is provided between the first electrode and the second electrode. The switch layer contains a chalcogen element. The switch layer includes a first region and a second region which have different composition ratios of one or more of chalcogen elements or different types of the one or more of chalcogen elements. The first region is provided close to the first electrode. The second region is provided closer to the second electrode than the first region.
-
公开(公告)号：US10069066B2
公开(公告)日：2018-09-04
申请号：US15193907
申请日：2016-06-27
发明人： Kazuhiro Ohba , Yuichi Kamori , Hitoshi Kimura
摘要： A target including: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element selected from the group consisting of S, Se, and Te. And a method for producing the target.
-
公开(公告)号：US20170098684A1
公开(公告)日：2017-04-06
申请号：US15379390
申请日：2016-12-14
发明人： Kazuhiro Ohba , Hiroaki Sei
CPC分类号： H01L27/2427 , H01L27/2463 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146
摘要： A switch device includes: a first electrode; a second electrode arranged to face the first electrode; and a switch layer provided between the first electrode and the second electrode. The switch layer includes a first layer containing a chalcogen element, and a second layer containing a high resistance material.
-
公开(公告)号：US11462685B2
公开(公告)日：2022-10-04
申请号：US16975630
申请日：2019-01-31
发明人： Hiroaki Sei , Kazuhiro Ohba , Shuichiro Yasuda
摘要： A switch device according to an embodiment of the present disclosure includes a first electrode; a second electrode opposed to the first electrode; and a switch layer including selenium (Se), at least one kind of germanium (Ge) or silicon (Si), boron (B), carbon (C), (Ga), and arsenic (As), and provided between the first electrode and the second electrode.
-
公开(公告)号：US10529777B2
公开(公告)日：2020-01-07
申请号：US15559601
申请日：2016-03-16
发明人： Hiroaki Sei , Kazuhiro Ohba
摘要： A switch device according to an embodiment of the technology includes a first electrode, a second electrode that faces the first electrode, and a switch layer provided between the first electrode and the second electrode. The switch layer includes a chalcogen element. The switch device further includes a diffusion suppressing layer that is in contact with at least a portion of a surface of the switch layer, and suppresses diffusion of oxygen into the switch layer.
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.017 秒)
