Invention Grant
- Patent Title: Apparatuses and methods for reducing row address to column address delay for a voltage threshold compensation sense amplifier
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Application No.: US16017826Application Date: 2018-06-25
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Publication No.: US10541008B2Publication Date: 2020-01-21
- Inventor: Christopher Kawamura , Tae H. Kim
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C7/06 ; G11C11/4091 ; G11C8/10 ; G11C7/12 ; G11C11/4074

Abstract:
Apparatuses and methods for reducing row address (RAS) to column address (CAS) delay are disclosed. An example apparatus includes a memory including a memory cell coupled to a first digit line in response to a wordline being set to an active state, and a sense amplifier configured to, during a sense operation, couple a first gut node to the first digit line and couple a second gut node to a second digit line in response to an isolation signal. The sense amplifier is further configured to, after the first gut node is coupled to the first digit line and the second gut node is coupled to the second digit line, drive the first digit line to a first sense voltage of a first control signal and drive the second digit line to a second sense voltage of a second control signal based on a data state of the memory cell.
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