Invention Grant
- Patent Title: Substrate processing apparatus and substrate processing method
-
Application No.: US15940528Application Date: 2018-03-29
-
Publication No.: US10541145B2Publication Date: 2020-01-21
- Inventor: Hiroyuki Ogawa , Tomoya Okubo , Akitaka Shimizu
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Fenwick & West LLP
- Priority: JP2017-065992 20170329; JP2018-019439 20180206
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/311 ; H01J37/32

Abstract:
In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a processing space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first gas supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.
Public/Granted literature
- US20180286696A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD Public/Granted day:2018-10-04
Information query
IPC分类: