Invention Grant
- Patent Title: Semiconductor light-emitting element, manufacturing method of semiconductor light-emitting element, and semiconductor device
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Application No.: US16296636Application Date: 2019-03-08
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Publication No.: US10541511B2Publication Date: 2020-01-21
- Inventor: Kota Tokuda , Takayuki Kawasumi
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP2014-046042 20140310
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/20 ; H01L21/02 ; H01S5/042 ; H01S5/22 ; H01S5/30 ; H01S5/32 ; H01S5/343 ; H01S5/20

Abstract:
A semiconductor light-emitting element includes a laminated structure which has an active layer between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a first semiconductor layer which includes at least the first conductivity-type semiconductor layer of the laminated structure, an insulation film which is formed on the first semiconductor layer and has an opening, and a second semiconductor layer which is formed on the insulation film and includes at least the second conductivity-type semiconductor layer of the laminated structure. The second semiconductor layer includes a first region facing the opening of the insulation film and a second region not facing the opening, and the second region has a portion with a higher impurity concentration than the first region.
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Information query
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