Invention Grant
- Patent Title: Dual silicide liner flow for enabling low contact resistance
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Application No.: US15287611Application Date: 2016-10-06
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Publication No.: US10546776B2Publication Date: 2020-01-28
- Inventor: Praneet Adusumilli , Veeraraghavan S. Basker , Zuoguang Liu , Tenko Yamashita , Chun-Chen Yeh
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/768 ; H01L23/535 ; H01L27/092 ; H01L23/525 ; H01L23/532
Abstract:
A method for fabricating a semiconductor device includes depositing a sacrificial liner in self-aligned contact openings in first and second regions. The openings are filled with a sacrificial material. The second region is blocked with a first mask to remove the sacrificial material from the first region. The first mask is removed from the second region, and the sacrificial liner is removed from the first region. A first liner is formed in the openings of the first region, and first contacts are formed in the first region on the first liner. The first region is blocked with a second mask to remove the sacrificial material from the second region. The second mask is removed from the first region, and the sacrificial liner is removed from the second region. A second liner is formed in the openings of the second region, and second contacts are formed in the second region.
Public/Granted literature
- US20170125306A1 DUAL SILICIDE LINER FLOW FOR ENABLING LOW CONTACT RESISTANCE Public/Granted day:2017-05-04
Information query
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