Invention Grant
- Patent Title: Conductive interconnect structures incorporating negative thermal expansion materials and associated systems, devices, and methods
-
Application No.: US15889120Application Date: 2018-02-05
-
Publication No.: US10546777B2Publication Date: 2020-01-28
- Inventor: Hongqi Li , Anurag Jindal , Jin Lu , Shyam Ramalingam
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/768 ; H01L21/288
Abstract:
Semiconductor devices having interconnects incorporating negative expansion (NTE) materials are disclosed herein. In one embodiment a semiconductor device includes a substrate having an opening that extends at least partially through the substrate. A conductive material having a positive coefficient of thermal expansion (CTE) partially fills the opening. A negative thermal expansion (NTE) having a negative CTE also partially fills the opening. In one embodiment, the conductive material includes copper and the NTE material includes zirconium tungstate.
Public/Granted literature
Information query
IPC分类:
