Invention Grant
- Patent Title: Semiconductor device for avoiding short circuit between adjacent storage nodes and manufacturing method thereof
-
Application No.: US16516204Application Date: 2019-07-18
-
Publication No.: US10546861B2Publication Date: 2020-01-28
- Inventor: Tzu-Tsen Liu , Li-Wei Feng , Chien-Ting Ho
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201710011195 20170106
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/311 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L29/08 ; H01L29/41
Abstract:
A semiconductor device and a manufacturing method thereof are provided. The method includes providing a substrate, a plurality of word lines and a plurality of bit lines, and then forming a storage node contact on each source/drain region, so that a width of a top surface of each storage node contact in a direction is less than a width of a bottom surface of each storage node contact.
Public/Granted literature
- US20190341385A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2019-11-07
Information query
IPC分类:
