Invention Grant
- Patent Title: Method for fabricating cap layer on an epitaxial layer
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Application No.: US15890320Application Date: 2018-02-06
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Publication No.: US10546922B2Publication Date: 2020-01-28
- Inventor: Chih-Kai Hsu , Ssu-I Fu , Yu-Hsiang Hung , Wei-Chi Cheng , Jyh-Shyang Jenq , Tsung-Mu Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201610209916 20160406
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L23/535 ; H01L21/768 ; H01L23/485 ; H01L29/08 ; H01L29/417 ; H01L21/285
Abstract:
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a gate structure is formed on the substrate. Next, a recess is formed adjacent to two sides of the gate structure, and an epitaxial layer is formed in the recess, in which a top surface of the epitaxial layer is lower than a top surface of the substrate. Next, a cap layer is formed on the epitaxial layer, in which a top surface of the cap layer is higher than a top surface of the substrate.
Public/Granted literature
- US20180166532A1 METHOD FOR FABRICATING CAP LAYER ON AN EPITAXIAL LAYER Public/Granted day:2018-06-14
Information query
IPC分类:
