Invention Grant
- Patent Title: Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the same
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Application No.: US16128267Application Date: 2018-09-11
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Publication No.: US10546948B1Publication Date: 2020-01-28
- Inventor: Meng-Chia Lee , Ralph N. Wall
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Abel Schillinger, LLP
- Main IPC: E21B49/00
- IPC: E21B49/00 ; H01L29/739 ; H01L21/265 ; H01L29/66 ; H01L29/06

Abstract:
An electronic device can include a semiconductor substrate having a front side and a back side; an emitter region closer to the front side than to the back side; a trench extending from a back side surface into the semiconductor substrate, wherein the trench has a sidewall and a bottom; a collector region along the back side surface and spaced apart from the bottom of the trench; a field-stop region lying along the bottom and at least a portion of the sidewall of the trench, wherein the emitter and field-stop regions have one conductivity type, and the collector region has the opposite conductivity type; and a collector terminal along the back side and including a metal-containing material, wherein the collector terminal contacts the collector region and is isolated from the field-stop region. A process of forming the electronic device does not require complex or marginal processing operations.
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