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    Semiconductor devices and methods of manufacturing semiconductor devices
    1.
    发明授权
    Semiconductor devices and methods of manufacturing semiconductor devices 有权

    公开(公告)号：US12284834B2

    公开(公告)日：2025-04-22

    申请号：US18777737

    申请日：2024-07-19

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Derrick Johnson ,  Yupeng Chen ,  Ralph N. Wall ,  Mark Griswold

    IPC: H10D89/60 ,  H10D84/85

    Abstract: In an example, a semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor region of the first conductivity type over the semiconductor substrate. A well region of a second conductivity type is in the semiconductor region. A doped region of the first conductivity type is in the well region. A doped region of the second conductivity type is in the well region. A doped region of the second conductivity type is in the semiconductor substrate at a bottom side. A doped region of the first conductivity type is in the semiconductor substrate at the bottom side. A first conductor is at a top side of the semiconductor region and a second conductor is at the bottom side. In some examples, one or more of doped regions at the bottom side is a patterned doped region.

    Semiconductor devices and methods of manufacturing semiconductor devices
    4.
    发明授权
    Semiconductor devices and methods of manufacturing semiconductor devices 有权

    公开(公告)号：US12087760B2

    公开(公告)日：2024-09-10

    申请号：US17662263

    申请日：2022-05-06

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Derrick Johnson ,  Yupeng Chen ,  Ralph N. Wall ,  Mark Griswold

    IPC: H01L27/02 ,  H01L27/092

    CPC classification number: H01L27/0262 ,  H01L27/0928

    Abstract: In an example, a semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor region of the first conductivity type over the semiconductor substrate. A well region of a second conductivity type is in the semiconductor region. A doped region of the first conductivity type is in the well region. A doped region of the second conductivity type is in the well region. A doped region of the second conductivity type is in the semiconductor substrate at a bottom side. A doped region of the first conductivity type is in the semiconductor substrate at the bottom side. A first conductor is at a top side of the semiconductor region and a second conductor is at the bottom side. In some examples, one or more of doped regions at the bottom side is a patterned doped region.

    Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the same
    6.
    发明授权
    Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the same 有权

    公开(公告)号：US10546948B1

    公开(公告)日：2020-01-28

    申请号：US16128267

    申请日：2018-09-11

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Meng-Chia Lee ,  Ralph N. Wall

    IPC: E21B49/00 ,  H01L29/739 ,  H01L21/265 ,  H01L29/66 ,  H01L29/06

    Abstract: An electronic device can include a semiconductor substrate having a front side and a back side; an emitter region closer to the front side than to the back side; a trench extending from a back side surface into the semiconductor substrate, wherein the trench has a sidewall and a bottom; a collector region along the back side surface and spaced apart from the bottom of the trench; a field-stop region lying along the bottom and at least a portion of the sidewall of the trench, wherein the emitter and field-stop regions have one conductivity type, and the collector region has the opposite conductivity type; and a collector terminal along the back side and including a metal-containing material, wherein the collector terminal contacts the collector region and is isolated from the field-stop region. A process of forming the electronic device does not require complex or marginal processing operations.

    Electronic device including a semiconductor layer within a trench and a semiconductor layer and a process of forming the same
    7.
    发明授权
    Electronic device including a semiconductor layer within a trench and a semiconductor layer and a process of forming the same 有权

    公开(公告)号：US12166068B2

    公开(公告)日：2024-12-10

    申请号：US17649299

    申请日：2022-01-28

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Ralph N. Wall ,  Raymond Lappan

    IPC: H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L29/788 ,  H01L49/02

    Abstract: In an aspect, a process of forming an electronic device can include patterning a substrate to define a trench having a sidewall and forming a first semiconductor layer within the trench and along the sidewall. In an embodiment, the process can further include forming a barrier layer within the trench after forming the first semiconductor layer; forming a second semiconductor layer within the trench after forming the barrier layer, wherein within the trench, first and second portions of the second semiconductor layer contact each other adjacent to a vertical centerline of the trench; and exposing the second semiconductor layer to radiation sufficient to allow a void within second semiconductor layer to migrate toward the barrier layer. In another embodiment, after forming a semiconductor within the trench, the process can further include forming an insulating layer that substantially fills a remaining portion of the trench.

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