Invention Grant
- Patent Title: Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same
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Application No.: US13677361Application Date: 2012-11-15
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Publication No.: US10546964B2Publication Date: 2020-01-28
- Inventor: Shih-Wei Chen , Wen-Chin Lee , Wen-Tsai Yen , Chung-Hsien Wu , Kuan-Chu Chen
- Applicant: Shih-Wei Chen , Wen-Chin Lee , Wen-Tsai Yen , Chung-Hsien Wu , Kuan-Chu Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L31/032
- IPC: H01L31/032 ; H01L31/0749 ; H01L31/0392 ; H01L31/0224

Abstract:
A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.
Public/Granted literature
- US20140130856A1 MOLYBDENUM SELENIDE SUBLAYERS WITH CONTROLLED THICKNESS IN SOLAR CELLS AND METHODS FOR FORMING THE SAME Public/Granted day:2014-05-15
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