Invention Grant
- Patent Title: Selective deposition of dielectric materials
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Application No.: US15970636Application Date: 2018-05-03
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Publication No.: US10553480B2Publication Date: 2020-02-04
- Inventor: Murad Redzheb , Silvia Armini
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP17169473 20170504
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L21/321 ; H01L23/522 ; H01L23/532

Abstract:
The present disclosure relates to a method for selectively forming a dielectric material on a first area of a top surface of a substrate. In an embodiment, the method involves providing the substrate including the top surface, the top surface including the first area and a second area, the first area having a hydrophilicity characterized by a water contact angle of at least 45° and the second area having a hydrophilicity characterized by a water contact angle of less than 40°. The method also involves providing a precursor aqueous solution on the substrate, the precursor aqueous solution including: a solvent, a dielectric material precursor, a catalyst for forming a dielectric material from the dielectric material precursor, and an ionic surfactant. Further, the method involves removing the solvent.
Public/Granted literature
- US20180323102A1 Selective Deposition of Dielectric Materials Public/Granted day:2018-11-08
Information query
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