公开(公告)号：US10553480B2

公开(公告)日：2020-02-04

申请号：US15970636

申请日：2018-05-03

Applicant: IMEC VZW

Inventor： Murad Redzheb ,  Silvia Armini

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/321 ,  H01L23/522 ,  H01L23/532

Abstract: The present disclosure relates to a method for selectively forming a dielectric material on a first area of a top surface of a substrate. In an embodiment, the method involves providing the substrate including the top surface, the top surface including the first area and a second area, the first area having a hydrophilicity characterized by a water contact angle of at least 45° and the second area having a hydrophilicity characterized by a water contact angle of less than 40°. The method also involves providing a precursor aqueous solution on the substrate, the precursor aqueous solution including: a solvent, a dielectric material precursor, a catalyst for forming a dielectric material from the dielectric material precursor, and an ionic surfactant. Further, the method involves removing the solvent.

公开(公告)号：US20180323102A1

公开(公告)日：2018-11-08

申请号：US15970636

申请日：2018-05-03

Applicant: IMEC VZW

Inventor： Murad Redzheb ,  Silvia Armini

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: The present disclosure relates to a method for selectively forming a dielectric material on a first area of a top surface of a substrate. In an embodiment, the method involves providing the substrate including the top surface, the top surface including the first area and a second area, the first area having a hydrophilicity characterized by a water contact angle of at least 45° and the second area having a hydrophilicity characterized by a water contact angle of less than 40°. The method also involves providing a precursor aqueous solution on the substrate, the precursor aqueous solution including: a solvent, a dielectric material precursor, a catalyst for forming a dielectric material from the dielectric material precursor, and an ionic surfactant. Further, the method involves removing the solvent.