Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15220438Application Date: 2016-07-27
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Publication No.: US10553558B2Publication Date: 2020-02-04
- Inventor: Yosuke Katsura , Yusuke Tanuma
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2015-163959 20150821
- Main IPC: H01L23/18
- IPC: H01L23/18 ; H01L21/48 ; H01L21/56 ; H01L23/00 ; H01L23/31 ; H01L25/065 ; H01L25/18

Abstract:
A semiconductor device includes a memory component, which is a semiconductor component (a semiconductor chip or a semiconductor package), to be mounted over an upper surface of a wiring substrate. In addition, in the upper surface, a distance between the memory component and a first substrate side of the upper surface is smaller than a distance between the memory component and a second substrate side of the upper surface. In addition, in the upper surface, a dam portion is formed between the memory component and the first substrate side.
Public/Granted literature
- US20170053846A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-02-23
Information query
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