Invention Grant
- Patent Title: Semiconductor devices with core-shell structures
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Application No.: US14211382Application Date: 2014-03-14
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Publication No.: US10553718B2Publication Date: 2020-02-04
- Inventor: Carlos H. Diaz , Chun-Hsiung Lin , Huicheng Chang , Syun-Ming Jang , Chien-Hsun Wang , Mao-Lin Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/775 ; H01L29/778 ; H01L29/423 ; H01L29/786 ; B82Y10/00 ; H01L21/02 ; H01L29/165 ; H01L29/51
Abstract:
A device structure includes: a core structure formed on a support, and a shell material formed on the core structure and surrounding at least part of the core structure. The shell material is associated with a first bandgap; the core structure is associated with a second bandgap; and the first bandgap is smaller than the second bandgap. The shell material and the core structure are configured to form a quantum-well channel in the shell material.
Public/Granted literature
- US20150263094A1 SEMICONDUCTOR DEVICES WITH CORE-SHELL STRUCTURES Public/Granted day:2015-09-17
Information query
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