Invention Grant
- Patent Title: Method for producing a plurality of semiconductor chips having recesses in the device layer
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Application No.: US15745940Application Date: 2016-07-13
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Publication No.: US10553755B2Publication Date: 2020-02-04
- Inventor: Lutz Hoeppel , Attila Molnar
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee Address: DE Regensburg
- Agency: McDermott Will & Emery LLP
- Priority: DE102015111721 20150720
- International Application: PCT/EP2016/066626 WO 20160713
- International Announcement: WO2017/012945 WO 20170126
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/00 ; H01L33/38 ; H01L33/44 ; H01L33/32

Abstract:
The invention relates, inter alia, to a method for producing a plurality of semiconductor chips, the method comprising the following steps: providing a substrate (1); applying a semiconductor layer sequence (2) to the substrate (1); generating a plurality of recesses (6) in the semiconductor layer sequence (2) on the side of the semiconductor layer sequence (2) that is facing away from the substrate (1); detaching the substrate (1) from the semiconductor layer sequence (2); thinning the semiconductor layer sequence (2) on the side that was facing the substrate (1) prior to detaching the substrate (1).
Public/Granted literature
- US20180219127A1 METHOD FOR PRODUCING A PLURALITY OF SEMICONDUCTOR CHIPS AND RADIATION-EMITTING SEMICONDUCTOR Public/Granted day:2018-08-02
Information query
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