- Patent Title: Device isolation using preferential oxidation of the bulk substrate
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Application No.: US16247989Application Date: 2019-01-15
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Publication No.: US10559666B2Publication Date: 2020-02-11
- Inventor: Anirban Basu , Guy M. Cohen , Amlan Majumdar , Yu Zhu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent L. Jeffery Kelly, Esq.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/205 ; H01L21/762 ; H01L21/02
Abstract:
A structure includes a semiconductor substrate, a semiconductor buffer layer disposed over the semiconductor substrate, an oxide layer disposed over the buffer layer, and a fin including a semiconductor material disposed over the oxide layer. The semiconductor material has an oxidation rate different from an oxidation rate of the buffer layer.
Public/Granted literature
- US20190165109A1 DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE Public/Granted day:2019-05-30
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