Invention Grant
- Patent Title: Method of forming semiconductor device
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Application No.: US15801308Application Date: 2017-11-01
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Publication No.: US10562762B2Publication Date: 2020-02-18
- Inventor: Feng-Yi Chang , Fu-Che Lee , Chieh-Te Chen
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201710911760 20170929
- Main IPC: B81C1/00
- IPC: B81C1/00 ; G03F7/00 ; H01L21/768 ; H01L21/311 ; H01L23/528 ; H01L21/033

Abstract:
A method of forming a semiconductor device includes following steps. First of all, plural first openings and plural second openings are sequentially formed on a material layer disposed on a substrate, with the second openings across the first openings to form plural overlapped regions. Then, plural patterns arranged in an array arrangement are formed, with each pattern overlapped each overlapped region, respectively. After that, transferring the first openings, the second openings and the patterns to the material layer, to from plural material patterns in an array arrangement. In another embodiment of the present invention, the first openings and the second openings may be replaced by plural first patterns and plural second patterns, while the patterns are replaced by plural openings.
Public/Granted literature
- US20190100430A1 METHOD OF FORMING SEMICONDUCTOR DEVICE Public/Granted day:2019-04-04
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