- 专利标题： Method of manufacturing semiconductor device using exposure mask having light transmission holes to transfer slit shaped pattern to stack structure
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申请号： US15983726申请日： 2018-05-18
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公开(公告)号： US10566344B2公开(公告)日： 2020-02-18
- 发明人: Woo Sung Moon , Do Youn Kim
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2017-0134728 20171017
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L27/11582 ; H01L21/311 ; H01L27/11565 ; H01L21/027 ; H01L21/475 ; H01L21/768
摘要：
A method of manufacturing a three-dimensional semiconductor device, the method comprising: forming a stack structure; patterning channel holes using light transmission holes of an exposure mask; forming cell plugs penetrating the stack structure; and patterning wave-type slits using light transmission holes of the exposure mask, wherein the step of patterning holes further includes sequentially stacking a first mask layer and a first photoresist layer on the stack structure, and exposing the first photoresist layer by light transmitted through the exposure mask.
公开/授权文献
- US20190115359A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 公开/授权日：2019-04-18
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