公开(公告)号：US10290646B2

公开(公告)日：2019-05-14

申请号：US15868661

申请日：2018-01-11

申请人： SK hynix Inc.

发明人： Do Youn Kim

IPC分类号： H01L21/28 ,  H01L27/11556 ,  H01L21/311 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/1157

摘要： A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include first channel layers arranged in a first direction. The semiconductor device may include second channel layers adjacent to the first channel layers in a second direction crossing the first direction and arranged in the first direction. The semiconductor device may include insulating layers stacked while surrounding side walls of the first and second channel layers. The semiconductor device may include conductive layers interposed between the insulating layers, and including first metal patterns extended in the first direction and second metal patterns extended in the first direction while surrounding the side walls of the first channel layers.

公开(公告)号：US10431594B2

公开(公告)日：2019-10-01

申请号：US15870038

申请日：2018-01-12

申请人： SK hynix Inc.

发明人： Do Youn Kim

IPC分类号： H01L29/76 ,  H01L27/11582 ,  H01L21/768 ,  H01L21/762 ,  H01L27/11565 ,  H01L21/033 ,  H01L21/311 ,  H01L27/1157

摘要： Provided herein may be a semiconductor device and a method of manufacturing the same. The method may include forming a second preliminary stack on a first preliminary stack; forming a first hard mask layer on the second preliminary stack; etching the first hard mask layer and forming holes through which the second preliminary stack is exposed; forming a second hard mask layer on the first hard mask layer to fill the holes; forming a linear trench by etching the second hard mask layer; forming a waved select line separation mask pattern by etching the exposed first hard mask layer; forming a select line separation trench by etching the exposed second preliminary stack using the select line separation mask pattern as an etching mask; and forming a select line separation layer by filling the select line separation trench with a non-conductor.

公开(公告)号：US09899400B2

公开(公告)日：2018-02-20

申请号：US15230676

申请日：2016-08-08

申请人： SK hynix Inc.

发明人： Do Youn Kim

IPC分类号： H01L21/311 ,  H01L27/11556 ,  H01L21/28 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11582

CPC分类号： H01L27/11556 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31105 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include first channel layers arranged in a first direction. The semiconductor device may include second channel layers adjacent to the first channel layers in a second direction crossing the first direction and arranged in the first direction. The semiconductor device may include insulating layers stacked while surrounding side walls of the first and second channel layers. The semiconductor device may include conductive layers interposed between the insulating layers, and including first metal patterns extended in the first direction and second metal patterns extended in the first direction while surrounding the side walls of the first channel layers.

公开(公告)号：US10566344B2

公开(公告)日：2020-02-18

申请号：US15983726

申请日：2018-05-18

申请人： SK hynix Inc.

发明人： Woo Sung Moon ,  Do Youn Kim

IPC分类号： H01L21/02 ,  H01L27/11582 ,  H01L21/311 ,  H01L27/11565 ,  H01L21/027 ,  H01L21/475 ,  H01L21/768

摘要： A method of manufacturing a three-dimensional semiconductor device, the method comprising: forming a stack structure; patterning channel holes using light transmission holes of an exposure mask; forming cell plugs penetrating the stack structure; and patterning wave-type slits using light transmission holes of the exposure mask, wherein the step of patterning holes further includes sequentially stacking a first mask layer and a first photoresist layer on the stack structure, and exposing the first photoresist layer by light transmitted through the exposure mask.

公开(公告)号：US11004862B2

公开(公告)日：2021-05-11

申请号：US16541797

申请日：2019-08-15

申请人： SK hynix Inc.

发明人： Do Youn Kim

IPC分类号： H01L27/11582 ,  H01L21/768 ,  H01L21/762 ,  H01L27/11565 ,  H01L21/033 ,  H01L21/311 ,  H01L27/1157

摘要： Provided herein may be a semiconductor device and a method of manufacturing the same. The method may include forming a second preliminary stack on a first preliminary stack; forming a first hard mask layer on the second preliminary stack; etching the first hard mask layer and forming holes through which the second preliminary stack is exposed; forming a second hard mask layer on the first hard mask layer to fill the holes; forming a linear trench by etching the second hard mask layer; forming a waved select line separation mask pattern by etching the exposed first hard mask layer; forming a select line separation trench by etching the exposed second preliminary stack using the select line separation mask pattern as an etching mask; and forming a select line separation layer by filling the select line separation trench with a non-conductor.

公开(公告)号：US09870991B1

公开(公告)日：2018-01-16

申请号：US15458330

申请日：2017-03-14

申请人： SK hynix Inc.

发明人： Do Youn Kim ,  Hyoung Soon Yune

IPC分类号： H01L27/115 ,  H01L23/528 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/522

CPC分类号： H01L23/528 ,  H01L23/5226 ,  H01L27/1157 ,  H01L27/11582

摘要： A semiconductor device may be provided. The semiconductor device may include conductive patterns surrounding a channel film. The conductive patterns may be stacked and spaced apart from one another. The semiconductor device may include a gate contact plug coupled to one of the conductive patterns. The semiconductor device may include support pillars penetrating the conductive patterns in a periphery of the gate contact plug.

公开(公告)号：US09786552B2

公开(公告)日：2017-10-10

申请号：US15084225

申请日：2016-03-29

申请人： SK hynix Inc.

发明人： Do Youn Kim

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L27/105

CPC分类号： H01L21/76816 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76877 ,  H01L21/76885 ,  H01L27/105

摘要： A method of forming fine patterns includes forming a partition on a base layer. The partition includes a partition block, a first open region provided to face the partition block, and first lines extending from the partition block to the first open region. A spacer is formed on sidewalls of the partition to define a second open region overlapping with the first open region and to include second lines on sidewalls of the first lines. The partition may be removed to open a third open region occupied by the partition block and spaces between the second lines. A target pattern is formed to include third lines filling the spaces between the second lines, a first pad block filling the second open region, and a second pad block filling the third open region. Each of the first and second pad blocks is separated into a plurality of pads.