Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16152240Application Date: 2018-10-04
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Publication No.: US10566418B2Publication Date: 2020-02-18
- Inventor: Zhi-Biao Zhou
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: TW106103493A 20170202
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L21/84 ; H01L49/02 ; H01L23/535 ; H01L21/762 ; H01L27/12 ; H01L21/3105
Abstract:
A semiconductor device is provided. The semiconductor device includes an insulating structure and a dielectric structure. The insulating structure is disposed on a substrate and has a plurality of openings. The dielectric structure is disposed on the insulating structure and extending into the plurality of openings.
Public/Granted literature
- US20190035887A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-01-31
Information query
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